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RJK0629DPK-VB Product details
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Product Introduction
RJK0629DPK-VB is a high-performance N-channel MOSFET in TO3P package, designed for high current and high voltage applications. Its maximum drain-source voltage is 60V, with excellent on-resistance, suitable for a variety of electronic devices requiring high efficiency. RJK0629DPK-VB uses Trench technology to ensure that it can provide excellent switching performance at low gate voltage, which is an ideal choice for power management and high power applications.
RJK0629DPK-VB is a high-performance N-channel MOSFET in TO3P package, designed for high current and high voltage applications. Its maximum drain-source voltage is 60V, with excellent on-resistance, suitable for a variety of electronic devices requiring high efficiency. RJK0629DPK-VB uses Trench technology to ensure that it can provide excellent switching performance at low gate voltage, which is an ideal choice for power management and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: RJK0629DPK-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.6mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Model**: RJK0629DPK-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.6mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applications and modules: RJK0629DPK-VB has a wide range of applications in multiple fields and modules, including: 1. **High-efficiency power conversion**: This MOSFET is widely used in high-power DC-DC converters, and can achieve efficient power management with extremely low conduction losses, suitable for industrial power supplies and power adapters. 2. **Electric vehicle drive system**: In the motor drive system of electric vehicles, RJK0629DPK-VB can handle currents up to 210A, ensuring efficient and stable operation of the motor, suitable for electric vehicles and hybrid vehicles. 3. **Power electronics**: In high-power power electronics such as frequency converters and inverters, the low on-resistance and high current carrying capacity of this MOSFET make it an ideal choice, helping to improve system efficiency. 4. **Consumer electronics and home appliances**: This device is suitable for high-power consumer electronics and home appliances, such as air conditioners and electric water heaters, and can provide a stable current supply to ensure reliable operation of the equipment under high loads.
In summary, RJK0629DPK-VB occupies an important position in modern electronic design with its excellent performance and wide application potential, especially in terms of high efficiency and high reliability.
In summary, RJK0629DPK-VB occupies an important position in modern electronic design with its excellent performance and wide application potential, especially in terms of high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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