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RJK0628JPE-VB Product details
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RJK0628JPE-VB Product Introduction
RJK0628JPE-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. This MOSFET has excellent on-resistance (RDS(ON)) and can provide extremely high current handling capability at a lower voltage, suitable for electronic circuits requiring high performance and high reliability. Its maximum drain-source voltage (VDS) is 60V, and the gate-source voltage (VGS) can reach ±20V, which is widely used in various power management and control systems.
RJK0628JPE-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. This MOSFET has excellent on-resistance (RDS(ON)) and can provide extremely high current handling capability at a lower voltage, suitable for electronic circuits requiring high performance and high reliability. Its maximum drain-source voltage (VDS) is 60V, and the gate-source voltage (VGS) can reach ±20V, which is widely used in various power management and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RJK0628JPE-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench technology
- **Model**: RJK0628JPE-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and module examples
RJK0628JPE-VB is widely used in the following fields and modules:
1. **Power management**: In high-efficiency switching power supplies (SMPS) and DC-DC converters, as a switching element, it effectively optimizes power conversion, improves system efficiency and reduces energy consumption.
2. **Motor drive**: In motor control circuits, such as H-bridge drivers, it provides large current output and can effectively control the performance of DC motors and stepper motors.
3. **Battery management system**: In battery charging and protection circuits, the use of this MOSFET can achieve efficient current control to ensure battery safety and performance.
4. **LED driver**: In LED lighting systems, as a switching element, it ensures efficient light source control and brightness adjustment to meet different lighting needs.
5. **Communication equipment**: In the power management of base stations and RF amplifiers, it provides reliable power support to ensure the stability and efficiency of signal transmission.
Through these applications, RJK0628JPE-VB provides efficient and reliable solutions for modern electronic products, meeting the needs of high power and high efficiency.
RJK0628JPE-VB is widely used in the following fields and modules:
1. **Power management**: In high-efficiency switching power supplies (SMPS) and DC-DC converters, as a switching element, it effectively optimizes power conversion, improves system efficiency and reduces energy consumption.
2. **Motor drive**: In motor control circuits, such as H-bridge drivers, it provides large current output and can effectively control the performance of DC motors and stepper motors.
3. **Battery management system**: In battery charging and protection circuits, the use of this MOSFET can achieve efficient current control to ensure battery safety and performance.
4. **LED driver**: In LED lighting systems, as a switching element, it ensures efficient light source control and brightness adjustment to meet different lighting needs.
5. **Communication equipment**: In the power management of base stations and RF amplifiers, it provides reliable power support to ensure the stability and efficiency of signal transmission.
Through these applications, RJK0628JPE-VB provides efficient and reliable solutions for modern electronic products, meeting the needs of high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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