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RFD16N06LE-VB Product details
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Product Introduction: RFD16N06LE-VB
RFD16N06LE-VB is a high-performance N-channel MOSFET in TO252 package with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, and the on-resistance (RDS(ON)) is 30mΩ at a VGS of 4.5V, which drops to 25mΩ at a VGS of 10V. The maximum drain current (ID) can reach 45A. This device uses Trench technology to provide efficient switching performance and excellent thermal management, making it ideal for a variety of power management and switching applications.
RFD16N06LE-VB is a high-performance N-channel MOSFET in TO252 package with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, and the on-resistance (RDS(ON)) is 30mΩ at a VGS of 4.5V, which drops to 25mΩ at a VGS of 10V. The maximum drain current (ID) can reach 45A. This device uses Trench technology to provide efficient switching performance and excellent thermal management, making it ideal for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: RFD16N06LE-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ (at VGS=4.5V)
- 25mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 45A
- **Technology**: Trench
- **Model**: RFD16N06LE-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ (at VGS=4.5V)
- 25mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Applications and modules
RFD16N06LE-VB is suitable for multiple application areas, here are some typical examples:
1. **Switching power supply**: This MOSFET is suitable for switching power supplies (such as AC-DC converters and DC-DC converters) due to its efficient switching characteristics, which can effectively improve power efficiency and reduce power consumption.
2. **Motor drive**: In motor control systems, RFD16N06LE-VB can be used as an efficient switch and is widely used in motor drives for power tools and industrial automation equipment.
3. **LED drive circuit**: This device can provide stable current control and is suitable for LED lighting applications to ensure the brightness of the LED and extend its service life.
4. **Power management**: In battery management systems, RFD16N06LE-VB can help monitor and control voltage and current, thereby improving the safety and reliability of power management.
5. **Consumer Electronics**: Due to its compact package and high efficiency, this MOSFET is suitable for power management and switching applications in various consumer electronics products, such as smartphones and portable devices.
Through these applications, the RFD16N06LE-VB provides excellent performance for a variety of power management and switching solutions, widely meeting the needs of different industries.
RFD16N06LE-VB is suitable for multiple application areas, here are some typical examples:
1. **Switching power supply**: This MOSFET is suitable for switching power supplies (such as AC-DC converters and DC-DC converters) due to its efficient switching characteristics, which can effectively improve power efficiency and reduce power consumption.
2. **Motor drive**: In motor control systems, RFD16N06LE-VB can be used as an efficient switch and is widely used in motor drives for power tools and industrial automation equipment.
3. **LED drive circuit**: This device can provide stable current control and is suitable for LED lighting applications to ensure the brightness of the LED and extend its service life.
4. **Power management**: In battery management systems, RFD16N06LE-VB can help monitor and control voltage and current, thereby improving the safety and reliability of power management.
5. **Consumer Electronics**: Due to its compact package and high efficiency, this MOSFET is suitable for power management and switching applications in various consumer electronics products, such as smartphones and portable devices.
Through these applications, the RFD16N06LE-VB provides excellent performance for a variety of power management and switching solutions, widely meeting the needs of different industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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