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RF1S9630SM-VB Product details
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Product Introduction: RF1S9630SM-VB
RF1S9630SM-VB is a high-performance P-channel MOSFET in TO263 package with -200V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). Its threshold voltage (Vth) is -3.5V, and the on-resistance (RDS(ON)) is 600mΩ at VGS of 4.5V and 500mΩ at VGS of 10V. The maximum drain current (ID) can reach -11A. This device adopts Trench technology and is designed for efficient switching performance and excellent thermal management. It is suitable for various power management and switching applications.
RF1S9630SM-VB is a high-performance P-channel MOSFET in TO263 package with -200V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). Its threshold voltage (Vth) is -3.5V, and the on-resistance (RDS(ON)) is 600mΩ at VGS of 4.5V and 500mΩ at VGS of 10V. The maximum drain current (ID) can reach -11A. This device adopts Trench technology and is designed for efficient switching performance and excellent thermal management. It is suitable for various power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | 500mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Model**: RF1S9630SM-VB
- **Package**: TO263
- **Configuration**: Unipolar P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ (at VGS=4.5V)
- 500mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: -11A
- **Technology**: Trench
- **Model**: RF1S9630SM-VB
- **Package**: TO263
- **Configuration**: Unipolar P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ (at VGS=4.5V)
- 500mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: -11A
- **Technology**: Trench
Domain and module applications：
Applications and modules
RF1S9630SM-VB is suitable for multiple application areas, here are some typical examples:
1. **Power switch**: Due to its high VDS and low on-resistance, RF1S9630SM-VB is very suitable for high-efficiency power switches, such as DC-DC converters, which can effectively improve power efficiency and reduce energy loss.
2. **Motor control**: In motor drive applications, this MOSFET can be used as a high-efficiency switch and is widely used in industrial motor control and household appliances to help improve motor performance.
3. **Reverse current protection**: RF1S9630SM-VB can be used for reverse current protection in the circuit to prevent damage to the system when the load changes, ensuring the safety and reliability of the equipment.
4. **LED driver**: The device can be used in LED lighting control circuits to provide a stable current to ensure the brightness and life of the LED lamp.
5. **Power Management System**: In the power management module, RF1S9630SM-VB can monitor and control current and voltage, improving the safety and performance of the entire power management system.
Through these applications, RF1S9630SM-VB provides excellent performance for P-channel power switching and management solutions, widely meeting the needs of multiple industries.
RF1S9630SM-VB is suitable for multiple application areas, here are some typical examples:
1. **Power switch**: Due to its high VDS and low on-resistance, RF1S9630SM-VB is very suitable for high-efficiency power switches, such as DC-DC converters, which can effectively improve power efficiency and reduce energy loss.
2. **Motor control**: In motor drive applications, this MOSFET can be used as a high-efficiency switch and is widely used in industrial motor control and household appliances to help improve motor performance.
3. **Reverse current protection**: RF1S9630SM-VB can be used for reverse current protection in the circuit to prevent damage to the system when the load changes, ensuring the safety and reliability of the equipment.
4. **LED driver**: The device can be used in LED lighting control circuits to provide a stable current to ensure the brightness and life of the LED lamp.
5. **Power Management System**: In the power management module, RF1S9630SM-VB can monitor and control current and voltage, improving the safety and performance of the entire power management system.
Through these applications, RF1S9630SM-VB provides excellent performance for P-channel power switching and management solutions, widely meeting the needs of multiple industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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