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RF1S50N06SM-VB Product details
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RF1S50N06SM-VB Product Introduction
RF1S50N06SM-VB is a high-efficiency N-Channel MOSFET in TO263 package, designed for medium and low voltage high current applications. The device has a rated drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 75A, suitable for use in high power and high efficiency environments. RF1S50N06SM-VB uses advanced Trench technology and has extremely low on-resistance (RDS(ON) of 12mΩ @ VGS=4.5V and 11mΩ @ VGS=10V), which significantly reduces energy loss and improves system performance.
RF1S50N06SM-VB is a high-efficiency N-Channel MOSFET in TO263 package, designed for medium and low voltage high current applications. The device has a rated drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 75A, suitable for use in high power and high efficiency environments. RF1S50N06SM-VB uses advanced Trench technology and has extremely low on-resistance (RDS(ON) of 12mΩ @ VGS=4.5V and 11mΩ @ VGS=10V), which significantly reduces energy loss and improves system performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RF1S50N06SM-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **VDS**: 60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ (VGS=4.5V)
- 11mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 75A
- **Technology**: Trench
- **Model**: RF1S50N06SM-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **VDS**: 60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ (VGS=4.5V)
- 11mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: RF1S50N06SM-VB is widely used in switching power supplies and DC-DC converters, providing efficient power conversion and reducing power consumption. It is suitable for computer power supplies, server power supplies, and power adapters.
2. **Motor drive**: This MOSFET performs well in motor control systems and is suitable for industrial automation, robots, and power tools. It can efficiently drive motors and ensure stable working performance.
3. **LED drive**: RF1S50N06SM-VB can be used in LED lighting and drive circuits to provide stable current control to ensure high efficiency and long-term reliability of LED lamps.
4. **Automotive electronics**: In the power management system of electric and hybrid vehicles, this MOSFET can be used for battery charge and discharge control and motor drive to improve system efficiency and safety.
5. **Communication equipment**: In wireless communication infrastructure, RF1S50N06SM-VB can be used in power amplifiers and signal processing modules to provide low loss and high efficiency to support stable data transmission.
RF1S50N06SM-VB, with its excellent electrical performance, is suitable for various high-power and high-efficiency application scenarios to meet the needs of modern electronic devices.
1. **Power management**: RF1S50N06SM-VB is widely used in switching power supplies and DC-DC converters, providing efficient power conversion and reducing power consumption. It is suitable for computer power supplies, server power supplies, and power adapters.
2. **Motor drive**: This MOSFET performs well in motor control systems and is suitable for industrial automation, robots, and power tools. It can efficiently drive motors and ensure stable working performance.
3. **LED drive**: RF1S50N06SM-VB can be used in LED lighting and drive circuits to provide stable current control to ensure high efficiency and long-term reliability of LED lamps.
4. **Automotive electronics**: In the power management system of electric and hybrid vehicles, this MOSFET can be used for battery charge and discharge control and motor drive to improve system efficiency and safety.
5. **Communication equipment**: In wireless communication infrastructure, RF1S50N06SM-VB can be used in power amplifiers and signal processing modules to provide low loss and high efficiency to support stable data transmission.
RF1S50N06SM-VB, with its excellent electrical performance, is suitable for various high-power and high-efficiency application scenarios to meet the needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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