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RF1S40N10-VB Product details
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Product Introduction: RF1S40N10-VB
RF1S40N10-VB is a high-performance N-channel MOSFET in TO262 package with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2V, the on-resistance (RDS(ON)) is 20mΩ (at VGS=10V), and the maximum drain current (ID) can reach 50A. This device uses Trench technology and is designed for efficient switching performance and excellent thermal management. It is suitable for a variety of power management and switching applications.
RF1S40N10-VB is a high-performance N-channel MOSFET in TO262 package with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2V, the on-resistance (RDS(ON)) is 20mΩ (at VGS=10V), and the maximum drain current (ID) can reach 50A. This device uses Trench technology and is designed for efficient switching performance and excellent thermal management. It is suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: RF1S40N10-VB
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 20mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench
- **Model**: RF1S40N10-VB
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 20mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applications and modules
RF1S40N10-VB is suitable for many application areas, here are some typical examples:
1. **Switching power supply**: Due to its high VDS and low on-resistance, RF1S40N10-VB is very suitable for switching power supplies (such as AC-DC and DC-DC converters), which can improve the efficiency of the power supply and reduce energy loss.
2. **Motor drive**: In motor control applications, this MOSFET can be used as an efficient switch and is widely used in industrial equipment, small motors and home appliances.
3. **LED lighting**: RF1S40N10-VB can be used in LED drive circuits to provide stable current and efficient switching control to ensure the best performance of LEDs and extend their service life.
4. **Power management system**: The device can be used in battery management systems to improve the safety and reliability of power management by monitoring and controlling voltage and current.
5. **Inverter**: In inverters and other power conversion devices, the RF1S40N10-VB is able to improve power conversion efficiency, especially in renewable energy systems such as solar and wind power.
Through these applications, the RF1S40N10-VB provides excellent performance for power management and switching solutions, widely meeting the needs of multiple industries.
RF1S40N10-VB is suitable for many application areas, here are some typical examples:
1. **Switching power supply**: Due to its high VDS and low on-resistance, RF1S40N10-VB is very suitable for switching power supplies (such as AC-DC and DC-DC converters), which can improve the efficiency of the power supply and reduce energy loss.
2. **Motor drive**: In motor control applications, this MOSFET can be used as an efficient switch and is widely used in industrial equipment, small motors and home appliances.
3. **LED lighting**: RF1S40N10-VB can be used in LED drive circuits to provide stable current and efficient switching control to ensure the best performance of LEDs and extend their service life.
4. **Power management system**: The device can be used in battery management systems to improve the safety and reliability of power management by monitoring and controlling voltage and current.
5. **Inverter**: In inverters and other power conversion devices, the RF1S40N10-VB is able to improve power conversion efficiency, especially in renewable energy systems such as solar and wind power.
Through these applications, the RF1S40N10-VB provides excellent performance for power management and switching solutions, widely meeting the needs of multiple industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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