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RDN150N20FU6-VB Product details
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RDN150N20FU6-VB Product Introduction
RDN150N20FU6-VB is a high-performance N-Channel MOSFET in TO220F package, designed for high voltage and high current applications. With a rated drain-source voltage (VDS) of 200V and a maximum drain current (ID) of 20A, it is suitable for use in high-power environments where reliability is required. The device uses Trench technology and has a lower on-resistance (RDS(ON) of 58mΩ @ VGS=10V), which can effectively reduce energy loss and improve system efficiency.
RDN150N20FU6-VB is a high-performance N-Channel MOSFET in TO220F package, designed for high voltage and high current applications. With a rated drain-source voltage (VDS) of 200V and a maximum drain current (ID) of 20A, it is suitable for use in high-power environments where reliability is required. The device uses Trench technology and has a lower on-resistance (RDS(ON) of 58mΩ @ VGS=10V), which can effectively reduce energy loss and improve system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: RDN150N20FU6-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **VDS**: 200V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: Trench
- **Model**: RDN150N20FU6-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **VDS**: 200V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: RDN150N20FU6-VB can be widely used in switching power supplies and DC-DC converters to provide efficient power conversion, help reduce overall power consumption and improve system performance.
2. **Motor drive**: In motor control systems, this MOSFET can achieve efficient drive of the motor, and is particularly suitable for motor control in industrial automation and robotics to ensure stable working conditions.
3. **Automotive electronics**: In battery management systems for electric and hybrid vehicles, RDN150N20FU6-VB can be used for battery charge and discharge control, which helps improve battery safety and service life.
4. **Consumer electronics**: In mobile phone chargers and other consumer electronic devices, this MOSFET can be used for efficient power management, ensuring fast charging and reducing heat generation.
5. **Communication equipment**: In wireless communications and infrastructure equipment, the RDN150N20FU6-VB can be used in power amplifiers and signal processing modules to provide stable performance and low loss.
With its superior electrical characteristics, the RDN150N20FU6-VB is suitable for a variety of application scenarios with high requirements for power and efficiency.
1. **Power management**: RDN150N20FU6-VB can be widely used in switching power supplies and DC-DC converters to provide efficient power conversion, help reduce overall power consumption and improve system performance.
2. **Motor drive**: In motor control systems, this MOSFET can achieve efficient drive of the motor, and is particularly suitable for motor control in industrial automation and robotics to ensure stable working conditions.
3. **Automotive electronics**: In battery management systems for electric and hybrid vehicles, RDN150N20FU6-VB can be used for battery charge and discharge control, which helps improve battery safety and service life.
4. **Consumer electronics**: In mobile phone chargers and other consumer electronic devices, this MOSFET can be used for efficient power management, ensuring fast charging and reducing heat generation.
5. **Communication equipment**: In wireless communications and infrastructure equipment, the RDN150N20FU6-VB can be used in power amplifiers and signal processing modules to provide stable performance and low loss.
With its superior electrical characteristics, the RDN150N20FU6-VB is suitable for a variety of application scenarios with high requirements for power and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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