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RCJ330N25TL-VB Product details
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RCJ330N25TL-VB Product Introduction
RCJ330N25TL-VB is a high-performance N-channel MOSFET in TO263 package for high voltage applications. Its maximum drain-source voltage (VDS) is 250V, and it supports a maximum gate-source voltage (VGS) of ±20V, which is suitable for a variety of power management and switching applications. With its 3.5V gate threshold voltage (Vth) and low on-resistance of 40mΩ (RDS(ON)@VGS=10V), RCJ330N25TL-VB performs well under high current conditions and can reach a rated current of 60A. This MOSFET uses advanced Trench technology to ensure excellent thermal performance and efficiency.
RCJ330N25TL-VB is a high-performance N-channel MOSFET in TO263 package for high voltage applications. Its maximum drain-source voltage (VDS) is 250V, and it supports a maximum gate-source voltage (VGS) of ±20V, which is suitable for a variety of power management and switching applications. With its 3.5V gate threshold voltage (Vth) and low on-resistance of 40mΩ (RDS(ON)@VGS=10V), RCJ330N25TL-VB performs well under high current conditions and can reach a rated current of 60A. This MOSFET uses advanced Trench technology to ensure excellent thermal performance and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RCJ330N25TL-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 60A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C (please refer to the data sheet for details)
- **Model**: RCJ330N25TL-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 60A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C (please refer to the data sheet for details)
Domain and module applications：
Application fields and module examples
1. **Power management**: RCJ330N25TL-VB can be used for efficient DC-DC converters, supporting high input voltage applications and ensuring output stability.
2. **Electric vehicles**: In the power distribution system of electric vehicles, this MOSFET can effectively control current, improve energy efficiency and reduce heat loss.
3. **Motor drive**: It can be applied to motor drive circuits to provide fast switching capabilities, enhance system response speed and improve drive efficiency.
4. **Solar inverter**: Due to its high voltage tolerance, RCJ330N25TL-VB is suitable for solar inverters to help achieve efficient energy conversion.
5. **LED drive**: In LED lighting systems, MOSFET can be used for constant current drive to improve system stability and reliability.
The above application examples show the versatility and wide applicability of RCJ330N25TL-VB, which is suitable for electronic design needs in different fields.
1. **Power management**: RCJ330N25TL-VB can be used for efficient DC-DC converters, supporting high input voltage applications and ensuring output stability.
2. **Electric vehicles**: In the power distribution system of electric vehicles, this MOSFET can effectively control current, improve energy efficiency and reduce heat loss.
3. **Motor drive**: It can be applied to motor drive circuits to provide fast switching capabilities, enhance system response speed and improve drive efficiency.
4. **Solar inverter**: Due to its high voltage tolerance, RCJ330N25TL-VB is suitable for solar inverters to help achieve efficient energy conversion.
5. **LED drive**: In LED lighting systems, MOSFET can be used for constant current drive to improve system stability and reliability.
The above application examples show the versatility and wide applicability of RCJ330N25TL-VB, which is suitable for electronic design needs in different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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