Product introduction：
RAF040P01TCR-VB Product Introduction
RAF040P01TCR-VB is a high-performance single P-channel MOSFET in a compact SC70-3 package, designed for low-voltage and high-efficiency applications. The device has a maximum drain-source voltage (VDS) of -20V, making it suitable for negative voltage switching and control applications. Its gate-source voltage (VGS) can reach ±12V, and its threshold voltage (Vth) is -0.6V, ensuring fast turn-on even under low voltage conditions. RDS(ON) performs well at different gate voltages: 100mΩ at VGS=2.5V and 80mΩ at VGS=4.5V, with a maximum continuous drain current (ID) of -3.1A. The use of Trench technology optimizes the conductivity and switching characteristics, enabling it to perform well in a variety of applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
100mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-3 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-3 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: RAF040P01TCR-VB
- **Package**: SC70-3
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 80mΩ @ VGS=4.5V
- **Maximum leakage current (ID)**: -3.1A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
RAF040P01TCR-VB MOSFET has wide applicability in multiple low voltage and high efficiency applications. Here are some specific application examples:
1. **Negative Voltage Switch**: This MOSFET is very suitable for negative voltage switching circuits, which can effectively control the current flow and improve the reliability and efficiency of the system.
2. **Power Management**: In power management circuits, RAF040P01TCR-VB can be used for voltage conversion and current control to optimize power performance and reduce energy loss.
3. **Load Drive**: In LED drive circuits, the device can effectively control the load and provide stable current output to ensure the normal operation of lighting equipment.
4. **Small Electronic Devices**: Due to its compact package and high efficiency, RAF040P01TCR-VB is particularly suitable for switching and control functions in mobile devices and other small electronic devices.
Through these applications, the RAF040P01TCR-VB MOSFET demonstrates its wide applicability in the field of low-voltage power management and control, meeting the requirements of modern electronic devices for high efficiency and miniaturization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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