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R6025ANZ-VB Product details
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Product Introduction
R8005ANJ-VB is a high voltage unipolar N-channel MOSFET in TO263 package, designed for applications requiring voltages up to 800V. This device utilizes SJ_Multi-EPI technology, with reliable electrical characteristics and good thermal performance, making it perform well in high voltage environments. The R8005ANJ-VB has a moderate on-resistance (RDS(ON)), which can effectively reduce power consumption and is suitable for various power electronics applications.
R8005ANJ-VB is a high voltage unipolar N-channel MOSFET in TO263 package, designed for applications requiring voltages up to 800V. This device utilizes SJ_Multi-EPI technology, with reliable electrical characteristics and good thermal performance, making it perform well in high voltage environments. The R8005ANJ-VB has a moderate on-resistance (RDS(ON)), which can effectively reduce power consumption and is suitable for various power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: R8005ANJ-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Model**: R8005ANJ-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **High-voltage switching power supply**: R8005ANJ-VB is an ideal choice for high-voltage switching power supply design, providing stable switching performance under high voltage and medium current conditions, improving the energy efficiency of the system.
2. **Motor drive**: In motor control systems, the device can be used as a power switch to support efficient driving of motors under high voltage conditions, and is widely used in industrial motors and electric vehicles.
3. **Inverter**: This MOSFET is suitable for photovoltaic inverters and other high-voltage inverters, capable of processing high-voltage DC input and converting it into stable AC output to meet the needs of renewable energy.
4. **High-voltage power management**: In high-voltage power management systems that require high-voltage switches, R8005ANJ-VB can be used to achieve efficient power control and protection to ensure system safety and reliability.
Through these applications, R8005ANJ-VB provides strong support for modern high-voltage electronic equipment and meets the design needs of a variety of industries.
1. **High-voltage switching power supply**: R8005ANJ-VB is an ideal choice for high-voltage switching power supply design, providing stable switching performance under high voltage and medium current conditions, improving the energy efficiency of the system.
2. **Motor drive**: In motor control systems, the device can be used as a power switch to support efficient driving of motors under high voltage conditions, and is widely used in industrial motors and electric vehicles.
3. **Inverter**: This MOSFET is suitable for photovoltaic inverters and other high-voltage inverters, capable of processing high-voltage DC input and converting it into stable AC output to meet the needs of renewable energy.
4. **High-voltage power management**: In high-voltage power management systems that require high-voltage switches, R8005ANJ-VB can be used to achieve efficient power control and protection to ensure system safety and reliability.
Through these applications, R8005ANJ-VB provides strong support for modern high-voltage electronic equipment and meets the design needs of a variety of industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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