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R6018ANJTL-VB Product details
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R6018ANJTL-VB Product Introduction
R6018ANJTL-VB is a high-voltage single N-channel MOSFET in TO263 package, designed for high voltage and high-efficiency power electronics applications. Its maximum drain-source voltage (VDS) can reach 650V, suitable for various power conversion and control applications. The gate-source voltage (VGS) of the device is ±30V, and the threshold voltage (Vth) is 3.5V, ensuring fast turn-on under low power conditions. RDS(ON) is 160mΩ (at VGS=10V), which enables it to have excellent conduction performance during high current operation, and the maximum continuous leakage current (ID) is 20A. The use of SJ_Multi-EPI technology enhances the conductivity and thermal stability of the device, making it suitable for a variety of high-efficiency power management applications.
R6018ANJTL-VB is a high-voltage single N-channel MOSFET in TO263 package, designed for high voltage and high-efficiency power electronics applications. Its maximum drain-source voltage (VDS) can reach 650V, suitable for various power conversion and control applications. The gate-source voltage (VGS) of the device is ±30V, and the threshold voltage (Vth) is 3.5V, ensuring fast turn-on under low power conditions. RDS(ON) is 160mΩ (at VGS=10V), which enables it to have excellent conduction performance during high current operation, and the maximum continuous leakage current (ID) is 20A. The use of SJ_Multi-EPI technology enhances the conductivity and thermal stability of the device, making it suitable for a variety of high-efficiency power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: R6018ANJTL-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: R6018ANJTL-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
R6018ANJTL-VB MOSFET has wide applicability in multiple high-voltage application areas. Here are some specific application examples:
1. **Switching power supply**: This MOSFET is very suitable for use in switching power supplies as a high-efficiency switching element. With its high voltage and low on-resistance, it improves the conversion efficiency of the power supply and reduces energy loss.
2. **Inverter**: In solar inverters and electric vehicle inverters, R6018ANJTL-VB can achieve efficient DC to AC conversion, supporting higher system efficiency and reliability.
3. **Motor drive**: In industrial motor control and drive systems, this device can be used to control high currents, provide a stable power supply, and ensure efficient operation of motors under different working conditions.
4. **High-voltage lighting control**: R6018ANJTL-VB can also be used as a switching element in LED lighting and other high-voltage lighting control systems to ensure efficient lighting solutions and extend the service life of lighting equipment.
Through these applications, the R6018ANJTL-VB MOSFET demonstrates its wide applicability in the field of high-voltage power management, meeting the requirements of modern power electronic equipment for high efficiency and reliability.
R6018ANJTL-VB MOSFET has wide applicability in multiple high-voltage application areas. Here are some specific application examples:
1. **Switching power supply**: This MOSFET is very suitable for use in switching power supplies as a high-efficiency switching element. With its high voltage and low on-resistance, it improves the conversion efficiency of the power supply and reduces energy loss.
2. **Inverter**: In solar inverters and electric vehicle inverters, R6018ANJTL-VB can achieve efficient DC to AC conversion, supporting higher system efficiency and reliability.
3. **Motor drive**: In industrial motor control and drive systems, this device can be used to control high currents, provide a stable power supply, and ensure efficient operation of motors under different working conditions.
4. **High-voltage lighting control**: R6018ANJTL-VB can also be used as a switching element in LED lighting and other high-voltage lighting control systems to ensure efficient lighting solutions and extend the service life of lighting equipment.
Through these applications, the R6018ANJTL-VB MOSFET demonstrates its wide applicability in the field of high-voltage power management, meeting the requirements of modern power electronic equipment for high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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