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R6008ANX-VB Product details
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R6008ANX-VB Product Introduction
R6008ANX-VB is a high-voltage N-type MOSFET in a TO220F package, designed for applications requiring high voltage and high current. The device has a maximum drain-source voltage (V_DS) of 650V, making it ideal for high-voltage power supplies and switching circuits. Its gate-source voltage (V_GS) is ±30V and its threshold voltage (V_th) is 3.5V, ensuring reliable turn-on within the operating voltage range. The R_DS(ON) value is 680mΩ (at V_GS=10V), which gives it lower power consumption when turned on, and with a rated drain current (I_D) of 12A, it is widely used in multiple industries.
R6008ANX-VB is a high-voltage N-type MOSFET in a TO220F package, designed for applications requiring high voltage and high current. The device has a maximum drain-source voltage (V_DS) of 650V, making it ideal for high-voltage power supplies and switching circuits. Its gate-source voltage (V_GS) is ±30V and its threshold voltage (V_th) is 3.5V, ensuring reliable turn-on within the operating voltage range. The R_DS(ON) value is 680mΩ (at V_GS=10V), which gives it lower power consumption when turned on, and with a rated drain current (I_D) of 12A, it is widely used in multiple industries.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: R6008ANX-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 680mΩ (at V_GS=10V)
- **Maximum drain current (I_D)**: 12A
- **Technology**: Planar technology
- **Model**: R6008ANX-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 680mΩ (at V_GS=10V)
- **Maximum drain current (I_D)**: 12A
- **Technology**: Planar technology
Domain and module applications：
Applications and module examples
1. **Switching power supply**:
- R6008ANX-VB is suitable for switching power supply design, and can provide high-efficiency power conversion in high-frequency operation. Its high voltage tolerance and low on-resistance make it perform well in high-frequency switching applications and reduce energy loss.
2. **LED drive circuit**:
- In the LED drive circuit, this MOSFET can effectively control the current of high-power LEDs, ensure stable operation of LEDs, and is suitable for various lighting and display applications to provide uniform light output.
3. **Motor control**:
- R6008ANX-VB can be used in motor drive systems, support efficient drive of DC motors and stepper motors, meet the needs of high voltage and medium current, and improve the control accuracy and response speed of motors.
4. **Industrial automation**:
- In the field of industrial automation, this MOSFET can be used for power management and switch control, ensure the safe switching of high-voltage loads, and enhance the reliability and performance of the system.
5. **Battery Management System**:
- R6008ANX-VB can also play an important role in the battery management system, controlling the charging and discharging process, ensuring the safe operation of the system at high voltage, thereby improving the efficiency and life of the battery.
The high voltage characteristics and excellent performance of R6008ANX-VB make it an ideal choice for a variety of high voltage applications, meeting the high requirements of efficiency and reliability of modern electronic devices.
1. **Switching power supply**:
- R6008ANX-VB is suitable for switching power supply design, and can provide high-efficiency power conversion in high-frequency operation. Its high voltage tolerance and low on-resistance make it perform well in high-frequency switching applications and reduce energy loss.
2. **LED drive circuit**:
- In the LED drive circuit, this MOSFET can effectively control the current of high-power LEDs, ensure stable operation of LEDs, and is suitable for various lighting and display applications to provide uniform light output.
3. **Motor control**:
- R6008ANX-VB can be used in motor drive systems, support efficient drive of DC motors and stepper motors, meet the needs of high voltage and medium current, and improve the control accuracy and response speed of motors.
4. **Industrial automation**:
- In the field of industrial automation, this MOSFET can be used for power management and switch control, ensure the safe switching of high-voltage loads, and enhance the reliability and performance of the system.
5. **Battery Management System**:
- R6008ANX-VB can also play an important role in the battery management system, controlling the charging and discharging process, ensuring the safe operation of the system at high voltage, thereby improving the efficiency and life of the battery.
The high voltage characteristics and excellent performance of R6008ANX-VB make it an ideal choice for a variety of high voltage applications, meeting the high requirements of efficiency and reliability of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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