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R6004CNDTL-VB Product details
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Product Introduction: R6004CNDTL-VB
R6004CNDTL-VB is a high-voltage N-channel MOSFET in TO252 package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1000mΩ (at VGS=10V), and the maximum leakage current (ID) can reach 5A. The device adopts SJ_Multi-EPI technology, which is designed to provide excellent performance and reliability, and is particularly suitable for power management and switching applications that require high voltage resistance and high efficiency.
R6004CNDTL-VB is a high-voltage N-channel MOSFET in TO252 package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1000mΩ (at VGS=10V), and the maximum leakage current (ID) can reach 5A. The device adopts SJ_Multi-EPI technology, which is designed to provide excellent performance and reliability, and is particularly suitable for power management and switching applications that require high voltage resistance and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: R6004CNDTL-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Model**: R6004CNDTL-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
R6004CNDTL-VB is suitable for multiple high voltage applications, here are some typical examples:
1. **Switching power supply**: Due to its high VDS and moderate RDS(ON), R6004CNDTL-VB is very suitable for switching power supplies (such as AC-DC converters and DC-DC converters), effectively improving energy efficiency and reducing heat loss.
2. **Lighting control**: In LED drive circuits, this MOSFET can provide efficient switching control and is suitable for various lighting systems, including residential lighting and industrial lighting, ensuring stability and energy efficiency.
3. **Motor drive**: R6004CNDTL-VB can be used as a high voltage switch in motor drive applications, providing efficient control, suitable for small motor control and automation equipment.
4. **Power management system**: The device can effectively control voltage and current in power management modules (such as battery management systems) to improve system safety and reliability.
5. **Inverter**: In solar and other types of inverters, R6004CNDTL-VB can be used for high-voltage switching, improving power conversion efficiency and meeting the needs of green energy solutions.
Through these applications, R6004CNDTL-VB provides ideal performance for high-voltage power and switching solutions, widely meeting the needs of multiple industries.
R6004CNDTL-VB is suitable for multiple high voltage applications, here are some typical examples:
1. **Switching power supply**: Due to its high VDS and moderate RDS(ON), R6004CNDTL-VB is very suitable for switching power supplies (such as AC-DC converters and DC-DC converters), effectively improving energy efficiency and reducing heat loss.
2. **Lighting control**: In LED drive circuits, this MOSFET can provide efficient switching control and is suitable for various lighting systems, including residential lighting and industrial lighting, ensuring stability and energy efficiency.
3. **Motor drive**: R6004CNDTL-VB can be used as a high voltage switch in motor drive applications, providing efficient control, suitable for small motor control and automation equipment.
4. **Power management system**: The device can effectively control voltage and current in power management modules (such as battery management systems) to improve system safety and reliability.
5. **Inverter**: In solar and other types of inverters, R6004CNDTL-VB can be used for high-voltage switching, improving power conversion efficiency and meeting the needs of green energy solutions.
Through these applications, R6004CNDTL-VB provides ideal performance for high-voltage power and switching solutions, widely meeting the needs of multiple industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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