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R5205CNDTL-VB Product details
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R5205CNDTL-VB Product Introduction
R5205CNDTL-VB is a high voltage N-type MOSFET in TO252 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (V_DS) can reach 650V, suitable for high voltage power supplies and switching circuits. The gate-source voltage (V_GS) of this MOSFET is ±30V and the threshold voltage (V_th) is 3.5V, ensuring reliable switching performance within the required voltage range. The RDS(ON) is 1000mΩ (at V_GS=10V), which makes it have relatively low power consumption when turned on, and the rated drain current is 5A, which is suitable for a variety of industrial and consumer electronics applications.
R5205CNDTL-VB is a high voltage N-type MOSFET in TO252 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (V_DS) can reach 650V, suitable for high voltage power supplies and switching circuits. The gate-source voltage (V_GS) of this MOSFET is ±30V and the threshold voltage (V_th) is 3.5V, ensuring reliable switching performance within the required voltage range. The RDS(ON) is 1000mΩ (at V_GS=10V), which makes it have relatively low power consumption when turned on, and the rated drain current is 5A, which is suitable for a variety of industrial and consumer electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: R5205CNDTL-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 1000mΩ (at V_GS=10V)
- **Maximum drain current (I_D)**: 5A
- **Technology**: SJ_Multi-EPI
- **Model**: R5205CNDTL-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 1000mΩ (at V_GS=10V)
- **Maximum drain current (I_D)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching power supply**:
- The R5205CNDTL-VB can be used in the design of high-voltage switching power supplies to provide efficient power conversion. Due to its high voltage tolerance and relatively low on-resistance, this MOSFET can reduce energy loss in high-frequency operation and improve overall efficiency.
2. **LED drive circuit**:
- In the LED drive circuit, this MOSFET can be used as a driver element to control the current of high-power LEDs. Its excellent current handling capability ensures stable operation of LEDs and is suitable for various lighting applications.
3. **Motor control**:
- The R5205CNDTL-VB also performs well in motor drive and control applications, meeting the needs of high voltage and medium current, and is suitable for driving DC motors and stepper motors.
4. **Industrial automation**:
- This MOSFET can be used for power management, switch control and sensor interface in industrial automation systems, supporting safe switching of high-voltage loads and improving system performance and stability.
5. **Battery Management System**:
- In the battery management system, R5205CNDTL-VB can be used to control the charging and discharging process, ensuring the safe operation of the system in a high voltage environment, while improving the efficiency and life of the battery.
The design and features of R5205CNDTL-VB make it an ideal choice for high voltage applications, meeting the performance, efficiency and reliability requirements of modern electronic devices.
1. **Switching power supply**:
- The R5205CNDTL-VB can be used in the design of high-voltage switching power supplies to provide efficient power conversion. Due to its high voltage tolerance and relatively low on-resistance, this MOSFET can reduce energy loss in high-frequency operation and improve overall efficiency.
2. **LED drive circuit**:
- In the LED drive circuit, this MOSFET can be used as a driver element to control the current of high-power LEDs. Its excellent current handling capability ensures stable operation of LEDs and is suitable for various lighting applications.
3. **Motor control**:
- The R5205CNDTL-VB also performs well in motor drive and control applications, meeting the needs of high voltage and medium current, and is suitable for driving DC motors and stepper motors.
4. **Industrial automation**:
- This MOSFET can be used for power management, switch control and sensor interface in industrial automation systems, supporting safe switching of high-voltage loads and improving system performance and stability.
5. **Battery Management System**:
- In the battery management system, R5205CNDTL-VB can be used to control the charging and discharging process, ensuring the safe operation of the system in a high voltage environment, while improving the efficiency and life of the battery.
The design and features of R5205CNDTL-VB make it an ideal choice for high voltage applications, meeting the performance, efficiency and reliability requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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