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R5021ANX-VB Product details
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R5021ANX-VB Product Introduction
R5021ANX-VB is a high-performance single N-channel MOSFET in a TO220F package, designed for high-voltage applications. With a drain-source voltage (VDS) capability of 650V, the device is suitable for operation in harsh power environments. Its gate-source voltage (VGS) can reach ±30V, and its threshold voltage (Vth) is 3.5V, ensuring rapid startup under low power conditions. RDS(ON) is 160mΩ (at VGS=10V), making it an excellent performer in high-current applications, with a maximum continuous drain current (ID) of 20A. This SJ_Multi-EPI technology design improves the conductivity and reliability of the device, making it suitable for a variety of power management applications.
R5021ANX-VB is a high-performance single N-channel MOSFET in a TO220F package, designed for high-voltage applications. With a drain-source voltage (VDS) capability of 650V, the device is suitable for operation in harsh power environments. Its gate-source voltage (VGS) can reach ±30V, and its threshold voltage (Vth) is 3.5V, ensuring rapid startup under low power conditions. RDS(ON) is 160mΩ (at VGS=10V), making it an excellent performer in high-current applications, with a maximum continuous drain current (ID) of 20A. This SJ_Multi-EPI technology design improves the conductivity and reliability of the device, making it suitable for a variety of power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: R5021ANX-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: R5021ANX-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
R5021ANX-VB MOSFET has a wide range of applicability in multiple high-voltage and high-efficiency applications. Here are some specific application areas and module examples:
1. **Switching power supply**: This MOSFET can be used as the main switching element in the switching power supply. With its high VDS and low RDS(ON) characteristics, it can improve power conversion efficiency and reduce heat generation.
2. **Inverter**: In solar inverters and other renewable energy systems, R5021ANX-VB can achieve efficient power conversion, supporting higher system efficiency and reliability.
3. **Motor drive**: In industrial motor drive applications, the device can effectively control high currents, providing better performance and response speed.
4. **High-voltage lighting system**: R5021ANX-VB can be used in high-voltage LED drive and lighting control to ensure high-efficiency and long-life lighting solutions.
Through these applications, the R5021ANX-VB MOSFET demonstrates its importance in the field of high-voltage power management, meeting the requirements of modern power electronic equipment for high efficiency and reliability.
R5021ANX-VB MOSFET has a wide range of applicability in multiple high-voltage and high-efficiency applications. Here are some specific application areas and module examples:
1. **Switching power supply**: This MOSFET can be used as the main switching element in the switching power supply. With its high VDS and low RDS(ON) characteristics, it can improve power conversion efficiency and reduce heat generation.
2. **Inverter**: In solar inverters and other renewable energy systems, R5021ANX-VB can achieve efficient power conversion, supporting higher system efficiency and reliability.
3. **Motor drive**: In industrial motor drive applications, the device can effectively control high currents, providing better performance and response speed.
4. **High-voltage lighting system**: R5021ANX-VB can be used in high-voltage LED drive and lighting control to ensure high-efficiency and long-life lighting solutions.
Through these applications, the R5021ANX-VB MOSFET demonstrates its importance in the field of high-voltage power management, meeting the requirements of modern power electronic equipment for high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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