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R5019ANJTL-VB Product details
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Product Introduction
R5019ANJTL-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) can reach 650V, suitable for applications such as high voltage power management, switching power supplies and motor drives. The device adopts advanced SJ_Multi-EPI technology and has a low on-resistance (RDS(ON)), ensuring high efficiency and reliability under high load conditions.
R5019ANJTL-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) can reach 650V, suitable for applications such as high voltage power management, switching power supplies and motor drives. The device adopts advanced SJ_Multi-EPI technology and has a low on-resistance (RDS(ON)), ensuring high efficiency and reliability under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: R5019ANJTL-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: R5019ANJTL-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **Switching power supply**: The high voltage characteristics of R5019ANJTL-VB make it very suitable for high-efficiency switching applications in AC-DC converters and DC-DC converters, which can improve energy conversion efficiency.
2. **Motor drive**: This MOSFET can be applied to motor control systems to provide high voltage and high current support, especially in motor drives of power tools and electric vehicles, enabling precise control and stable operation.
3. **High-voltage power amplifier**: In the field of wireless communication and signal amplification, R5019ANJTL-VB can be used as a switching device for power amplifiers to ensure stable operation under high voltage conditions.
4. **Inverter**: Suitable for photovoltaic inverters and other types of inverter designs, it can handle high voltage DC power and effectively convert it to AC output to meet the needs of renewable energy systems.
Through these applications, R5019ANJTL-VB provides efficient, reliable and stable solutions in high voltage environments to meet various challenges in modern electronic design.
1. **Switching power supply**: The high voltage characteristics of R5019ANJTL-VB make it very suitable for high-efficiency switching applications in AC-DC converters and DC-DC converters, which can improve energy conversion efficiency.
2. **Motor drive**: This MOSFET can be applied to motor control systems to provide high voltage and high current support, especially in motor drives of power tools and electric vehicles, enabling precise control and stable operation.
3. **High-voltage power amplifier**: In the field of wireless communication and signal amplification, R5019ANJTL-VB can be used as a switching device for power amplifiers to ensure stable operation under high voltage conditions.
4. **Inverter**: Suitable for photovoltaic inverters and other types of inverter designs, it can handle high voltage DC power and effectively convert it to AC output to meet the needs of renewable energy systems.
Through these applications, R5019ANJTL-VB provides efficient, reliable and stable solutions in high voltage environments to meet various challenges in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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