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R5016ANX-VB Product details
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Product Introduction: R5016ANX-VB
R5016ANX-VB is a high voltage N-channel MOSFET in TO220F package with 650V drain-source voltage (VDS) and 30V gate-source voltage (VGS). The device has a threshold voltage (Vth) of 3.5V, a low on-resistance RDS(ON) of 160mΩ (at VGS=10V), and can withstand a maximum current of 20A. Using SJ_Multi-EPI technology, R5016ANX-VB is designed for efficient power management and switching applications, providing excellent thermal performance and reliability.
R5016ANX-VB is a high voltage N-channel MOSFET in TO220F package with 650V drain-source voltage (VDS) and 30V gate-source voltage (VGS). The device has a threshold voltage (Vth) of 3.5V, a low on-resistance RDS(ON) of 160mΩ (at VGS=10V), and can withstand a maximum current of 20A. Using SJ_Multi-EPI technology, R5016ANX-VB is designed for efficient power management and switching applications, providing excellent thermal performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: R5016ANX-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: R5016ANX-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Modules
R5016ANX-VB is suitable for multiple high-voltage and high-efficiency applications, including:
1. **Switching Power Supply**: Due to its high VDS and low RDS(ON), R5016ANX-VB can effectively reduce conduction losses and improve overall efficiency in switching power supplies, and is suitable for AC-DC and DC-DC converters.
2. **Motor Drive**: In motor drive circuits, R5016ANX-VB can be used for high-voltage switching, providing reliable control and high efficiency, suitable for motor control in industrial automation and electric vehicles.
3. **Lighting System**: In LED lighting and other high-voltage lighting systems, this MOSFET can achieve efficient switching control, reduce heat loss, and improve lighting efficiency.
4. **Power Management Module**: In various power management applications, R5016ANX-VB provides high-voltage protection and high-efficiency switching capabilities, suitable for battery management systems and energy storage systems.
5. **Power conversion equipment**: In solar inverters and other power conversion devices, the device can effectively control and convert power, improving system stability and efficiency.
Through these applications, the R5016ANX-VB becomes an ideal choice in high-voltage power solutions, meeting the needs of various industries.
R5016ANX-VB is suitable for multiple high-voltage and high-efficiency applications, including:
1. **Switching Power Supply**: Due to its high VDS and low RDS(ON), R5016ANX-VB can effectively reduce conduction losses and improve overall efficiency in switching power supplies, and is suitable for AC-DC and DC-DC converters.
2. **Motor Drive**: In motor drive circuits, R5016ANX-VB can be used for high-voltage switching, providing reliable control and high efficiency, suitable for motor control in industrial automation and electric vehicles.
3. **Lighting System**: In LED lighting and other high-voltage lighting systems, this MOSFET can achieve efficient switching control, reduce heat loss, and improve lighting efficiency.
4. **Power Management Module**: In various power management applications, R5016ANX-VB provides high-voltage protection and high-efficiency switching capabilities, suitable for battery management systems and energy storage systems.
5. **Power conversion equipment**: In solar inverters and other power conversion devices, the device can effectively control and convert power, improving system stability and efficiency.
Through these applications, the R5016ANX-VB becomes an ideal choice in high-voltage power solutions, meeting the needs of various industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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