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R5013ANJTL-VB Product details
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Product Introduction
**R5013ANJTL-VB** is a high voltage N-channel MOSFET in TO263 package, designed for high voltage and high efficiency applications. It has a low on-resistance (RDS(ON) = 160mΩ@VGS=10V) and supports a drain-to-source voltage (VDS) of up to 650V, which can meet the needs of many power conversion and switching applications. This MOSFET uses SJ_Multi-EPI technology to provide excellent thermal performance and switching characteristics, and is very suitable for high frequency and high efficiency power management systems.
**R5013ANJTL-VB** is a high voltage N-channel MOSFET in TO263 package, designed for high voltage and high efficiency applications. It has a low on-resistance (RDS(ON) = 160mΩ@VGS=10V) and supports a drain-to-source voltage (VDS) of up to 650V, which can meet the needs of many power conversion and switching applications. This MOSFET uses SJ_Multi-EPI technology to provide excellent thermal performance and switching characteristics, and is very suitable for high frequency and high efficiency power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: R5013ANJTL-VB
- **Package**: TO263
- **Configuration**: Single N channel
- **Drain to source voltage (VDS)**: 650V
- **Gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: R5013ANJTL-VB
- **Package**: TO263
- **Configuration**: Single N channel
- **Drain to source voltage (VDS)**: 650V
- **Gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Power converter**: The R5013ANJTL-VB is suitable for switch mode power supply (SMPS) designs, especially where high voltage input and high efficiency conversion are required. This makes it an ideal choice for servers, data centers and industrial power supplies.
2. **Inverter**: In photovoltaic and wind power inverters, the high voltage withstand capability and low on-resistance of this MOSFET make it suitable for energy conversion and power optimization.
3. **Electric vehicle**: In the power management system of electric vehicles, the R5013ANJTL-VB can be used for high voltage battery management and control of drive motors, providing reliable performance and high efficiency.
4. **Motor drive**: This model of MOSFET can also be used in motor drive applications, especially in environments that require high frequency switching and high power output.
Through these applications, the R5013ANJTL-VB provides a reliable solution to meet the requirements of modern electrical equipment for high efficiency and high reliability.
1. **Power converter**: The R5013ANJTL-VB is suitable for switch mode power supply (SMPS) designs, especially where high voltage input and high efficiency conversion are required. This makes it an ideal choice for servers, data centers and industrial power supplies.
2. **Inverter**: In photovoltaic and wind power inverters, the high voltage withstand capability and low on-resistance of this MOSFET make it suitable for energy conversion and power optimization.
3. **Electric vehicle**: In the power management system of electric vehicles, the R5013ANJTL-VB can be used for high voltage battery management and control of drive motors, providing reliable performance and high efficiency.
4. **Motor drive**: This model of MOSFET can also be used in motor drive applications, especially in environments that require high frequency switching and high power output.
Through these applications, the R5013ANJTL-VB provides a reliable solution to meet the requirements of modern electrical equipment for high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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