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R5011FNX-VB Product details
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R5011FNX-VB Product Introduction
R5011FNX-VB is a high-voltage N-type MOSFET in a TO220F package, designed for applications that require high voltage and high current handling capabilities. With a maximum V_DS rated voltage of 550V, the device is suitable for power management applications that require high switching efficiency and low on-resistance. Its low R_DS(ON) value (260mΩ@V_GS=10V) enables it to effectively reduce power consumption in both high-frequency switching and linear modes. The R5011FNX-VB has a rated current of 18A and is suitable for a variety of industrial and consumer electronics fields.
R5011FNX-VB is a high-voltage N-type MOSFET in a TO220F package, designed for applications that require high voltage and high current handling capabilities. With a maximum V_DS rated voltage of 550V, the device is suitable for power management applications that require high switching efficiency and low on-resistance. Its low R_DS(ON) value (260mΩ@V_GS=10V) enables it to effectively reduce power consumption in both high-frequency switching and linear modes. The R5011FNX-VB has a rated current of 18A and is suitable for a variety of industrial and consumer electronics fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: R5011FNX-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **Maximum drain-source voltage (V_DS)**: 550V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**: 260mΩ (at V_GS=10V)
- **Maximum drain current (I_D)**: 18A
- **Technology**: Planar technology
- **Model**: R5011FNX-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **Maximum drain-source voltage (V_DS)**: 550V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**: 260mΩ (at V_GS=10V)
- **Maximum drain current (I_D)**: 18A
- **Technology**: Planar technology
Domain and module applications：
Applications and Module Examples
1. **Switching Power Supply**:
- The R5011FNX-VB can be widely used in switching power supplies to provide high-efficiency power conversion. Due to its high voltage withstand capability and low on-resistance, this MOSFET can significantly reduce energy loss when switching at high frequencies.
2. **Motor Drive**:
- In motor control systems, this MOSFET can be used as a driver element to ensure stable current output during startup and operation. Its high rated current and voltage make it suitable for a variety of motor types, including DC motors and stepper motors.
3. **LED Drive Circuit**:
- The R5011FNX-VB is also suitable for high-power LED drive circuits, capable of withstanding high voltages and maintaining good thermal performance, adapting to the needs of various LED applications.
4. **Industrial Control**:
- In industrial automation and control systems, this MOSFET can be used for load switches, sensor interfaces, and other applications that require fast switching to improve the overall performance of the system.
5. **Battery Management System**:
- R5011FNX-VB can be used in battery management systems to control battery charge and discharge, ensure the system works safely at high voltages, and effectively manage current flow.
The design and performance of this MOSFET make it an ideal choice for a variety of high voltage applications, meeting the efficiency and reliability requirements of modern electronic devices.
1. **Switching Power Supply**:
- The R5011FNX-VB can be widely used in switching power supplies to provide high-efficiency power conversion. Due to its high voltage withstand capability and low on-resistance, this MOSFET can significantly reduce energy loss when switching at high frequencies.
2. **Motor Drive**:
- In motor control systems, this MOSFET can be used as a driver element to ensure stable current output during startup and operation. Its high rated current and voltage make it suitable for a variety of motor types, including DC motors and stepper motors.
3. **LED Drive Circuit**:
- The R5011FNX-VB is also suitable for high-power LED drive circuits, capable of withstanding high voltages and maintaining good thermal performance, adapting to the needs of various LED applications.
4. **Industrial Control**:
- In industrial automation and control systems, this MOSFET can be used for load switches, sensor interfaces, and other applications that require fast switching to improve the overall performance of the system.
5. **Battery Management System**:
- R5011FNX-VB can be used in battery management systems to control battery charge and discharge, ensure the system works safely at high voltages, and effectively manage current flow.
The design and performance of this MOSFET make it an ideal choice for a variety of high voltage applications, meeting the efficiency and reliability requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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