中文
English
R5011ANX-VB Product details
Back to previous pageProduct introduction：
R5011ANX-VB Product Introduction
R5011ANX-VB is a high-performance single N-channel MOSFET in a TO220F package for high voltage applications. The device has a drain-source voltage (VDS) of 550V and is capable of operating at higher gate-source voltages (VGS) up to ±30V. Its threshold voltage (Vth) is 3V, enabling startup under low power conditions. RDS(ON) is 260mΩ (at VGS=10V), which gives this MOSFET low conduction losses in high current applications, with a maximum continuous drain current (ID) of 18A. This planar technology design ensures good thermal and electrical characteristics.
R5011ANX-VB is a high-performance single N-channel MOSFET in a TO220F package for high voltage applications. The device has a drain-source voltage (VDS) of 550V and is capable of operating at higher gate-source voltages (VGS) up to ±30V. Its threshold voltage (Vth) is 3V, enabling startup under low power conditions. RDS(ON) is 260mΩ (at VGS=10V), which gives this MOSFET low conduction losses in high current applications, with a maximum continuous drain current (ID) of 18A. This planar technology design ensures good thermal and electrical characteristics.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: R5011ANX-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Planar technology
- **Model**: R5011ANX-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Planar technology
Domain and module applications：
Applications and Module Examples
The R5011ANX-VB MOSFET is suitable for a variety of high voltage and high efficiency applications. Here are some specific application areas and module examples:
1. **Switching Power Supply**: Due to its high VDS capability and low RDS(ON), this MOSFET is very suitable for the main switching element of the switching power supply to improve efficiency and reduce heat loss.
2. **Electric Vehicle**: In the power conversion system of electric vehicles, the R5011ANX-VB can be used as a switching element in the inverter to achieve efficient power conversion.
3. **Industrial Automation**: In motor control and drive systems, the device can be used to drive high current motors, provide precise control and good thermal management.
4. **Lighting Control**: This MOSFET can also be used as a switching element in LED lighting control circuits to achieve efficient lighting solutions.
Through these applications, the R5011ANX-VB MOSFET demonstrates its importance and wide applicability in high voltage, high efficiency power management.
The R5011ANX-VB MOSFET is suitable for a variety of high voltage and high efficiency applications. Here are some specific application areas and module examples:
1. **Switching Power Supply**: Due to its high VDS capability and low RDS(ON), this MOSFET is very suitable for the main switching element of the switching power supply to improve efficiency and reduce heat loss.
2. **Electric Vehicle**: In the power conversion system of electric vehicles, the R5011ANX-VB can be used as a switching element in the inverter to achieve efficient power conversion.
3. **Industrial Automation**: In motor control and drive systems, the device can be used to drive high current motors, provide precise control and good thermal management.
4. **Lighting Control**: This MOSFET can also be used as a switching element in LED lighting control circuits to achieve efficient lighting solutions.
Through these applications, the R5011ANX-VB MOSFET demonstrates its importance and wide applicability in high voltage, high efficiency power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
