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R5009FNX-VB Product details
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Product Introduction
R5009FNX-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high voltage and high current applications. With a maximum drain-source voltage of 650V, it is suitable for power management, switching power supplies and motor control. This MOSFET is designed to provide low on-resistance and high efficiency, ensuring reliability and performance under various operating conditions.
R5009FNX-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high voltage and high current applications. With a maximum drain-source voltage of 650V, it is suitable for power management, switching power supplies and motor control. This MOSFET is designed to provide low on-resistance and high efficiency, ensuring reliability and performance under various operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: R5009FNX-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **RDS(ON)**: 830mΩ@VGS=10V
- **Maximum leakage current (ID)**: 10A
- **Technology**: Plannar
- **Model**: R5009FNX-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **RDS(ON)**: 830mΩ@VGS=10V
- **Maximum leakage current (ID)**: 10A
- **Technology**: Plannar
Domain and module applications：
Applications: R5009FNX-VB is widely used in the following fields: 1. **Power converter**: In AC-DC and DC-DC converters, the high voltage capability and low on-resistance of R5009FNX-VB help improve power efficiency and are suitable for a variety of consumer electronics and industrial power applications. 2. **Switching power supply**: This MOSFET is very suitable for switching power supply (SMPS), which can operate stably at high voltage to ensure the reliability and high efficiency of power supply. 3. **Motor drive**: In motor control systems, R5009FNX-VB can be used for high voltage applications, supporting the start and stop and speed regulation of motors, suitable for industrial automation equipment and home appliances. 4. **Lighting control**: It can be used for high voltage LED drive circuits to provide reliable power control and ensure the stability and efficiency of lighting systems. 5. **Automotive electronics**: In the power management system of electric vehicles and hybrid vehicles, this MOSFET can handle high voltages and support efficient battery management and power systems.
In short, the R5009FNX-VB is a versatile, high-efficiency high-voltage MOSFET that can meet the needs of various high-voltage applications and provide excellent performance and reliability.
In short, the R5009FNX-VB is a versatile, high-efficiency high-voltage MOSFET that can meet the needs of various high-voltage applications and provide excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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