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QS6K21TR-VB Product details
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QS6K21TR-VB Product Introduction
QS6K21TR-VB is a high-efficiency dual N-channel MOSFET in a SOT23-6 package designed for a variety of electronic applications. The device has excellent conduction performance, a drain-source voltage (VDS) of up to 40V, and can support a leakage current of up to 3.6A. Utilizing Trench technology, the QS6K21TR-VB provides low on-resistance (RDS(ON) of 58mΩ@VGS=10V), resulting in higher efficiency and lower power consumption under high loads, making it ideal for use in power management and signal switching circuits.
QS6K21TR-VB is a high-efficiency dual N-channel MOSFET in a SOT23-6 package designed for a variety of electronic applications. The device has excellent conduction performance, a drain-source voltage (VDS) of up to 40V, and can support a leakage current of up to 3.6A. Utilizing Trench technology, the QS6K21TR-VB provides low on-resistance (RDS(ON) of 58mΩ@VGS=10V), resulting in higher efficiency and lower power consumption under high loads, making it ideal for use in power management and signal switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 40V | 1.8V | 3.6A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 40V | 1.8V | 3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 40V | 1.8V | 3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description
- **Model**: QS6K21TR-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.8V
- **RDS(ON)**:
- @ VGS = 4.5V: 72mΩ
- @ VGS = 10V: 58mΩ
- **ID (maximum leakage current)**: 3.6A
- **Technology**: Trench
- **Model**: QS6K21TR-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.8V
- **RDS(ON)**:
- @ VGS = 4.5V: 72mΩ
- @ VGS = 10V: 58mΩ
- **ID (maximum leakage current)**: 3.6A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: QS6K21TR-VB is commonly used in DC-DC converters, which can efficiently control the output voltage and keep the heat generation low under high load conditions, suitable for power adapters and chargers.
2. **Signal switch**: This MOSFET can be used in signal switching circuits, providing fast switching performance, suitable for signal switching applications of audio and video equipment, and improving the response speed of the system.
3. **LED driver**: In LED lighting applications, QS6K21TR-VB can efficiently drive LEDs and ensure stable light output, suitable for smart home lighting and automotive lamps.
4. **Consumer electronics**: Widely used in power management modules for smartphones, tablets and other small electronic devices, helping to extend battery life and improve device performance.
5. **Motor control**: It can be used in small motor control modules, suitable for electric vehicles and robots, providing efficient switching control and reliable current handling capabilities.
QS6K21TR-VB is a dual N-channel MOSFET with excellent performance and wide application, which can meet the needs of high-efficiency power management and signal processing in modern electronic devices.
1. **Power management**: QS6K21TR-VB is commonly used in DC-DC converters, which can efficiently control the output voltage and keep the heat generation low under high load conditions, suitable for power adapters and chargers.
2. **Signal switch**: This MOSFET can be used in signal switching circuits, providing fast switching performance, suitable for signal switching applications of audio and video equipment, and improving the response speed of the system.
3. **LED driver**: In LED lighting applications, QS6K21TR-VB can efficiently drive LEDs and ensure stable light output, suitable for smart home lighting and automotive lamps.
4. **Consumer electronics**: Widely used in power management modules for smartphones, tablets and other small electronic devices, helping to extend battery life and improve device performance.
5. **Motor control**: It can be used in small motor control modules, suitable for electric vehicles and robots, providing efficient switching control and reliable current handling capabilities.
QS6K21TR-VB is a dual N-channel MOSFET with excellent performance and wide application, which can meet the needs of high-efficiency power management and signal processing in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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