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QS6J1TR-VB Product details
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Product Introduction
**QS6J1TR-VB** is a high-performance dual P-channel MOSFET in SOT23-6 package, designed for low voltage applications. Its maximum drain-source voltage (VDS) is -20V, and it can operate stably at a continuous current of -4A. The device has the characteristics of low on-resistance, ensuring that energy loss during switching operation is minimized, and is suitable for a variety of high-efficiency circuit designs.
**QS6J1TR-VB** is a high-performance dual P-channel MOSFET in SOT23-6 package, designed for low voltage applications. Its maximum drain-source voltage (VDS) is -20V, and it can operate stably at a continuous current of -4A. The device has the characteristics of low on-resistance, ensuring that energy loss during switching operation is minimized, and is suitable for a variety of high-efficiency circuit designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description
- **Model**: QS6J1TR-VB
- **Package type**: SOT23-6
- **Configuration**: Dual P-channel
- **Maximum drain-source voltage (VDS)**: -20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- RDS(ON) @ VGS = 2.5V: 100mΩ
- RDS(ON) @ VGS = 4.5V: 75mΩ
- **Maximum continuous current (ID)**: -4A
- **Technology**: Trench
- **Model**: QS6J1TR-VB
- **Package type**: SOT23-6
- **Configuration**: Dual P-channel
- **Maximum drain-source voltage (VDS)**: -20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- RDS(ON) @ VGS = 2.5V: 100mΩ
- RDS(ON) @ VGS = 4.5V: 75mΩ
- **Maximum continuous current (ID)**: -4A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Load switch**: QS6J1TR-VB can be used in load switch circuits to provide efficient switch control in low voltage applications, ensuring that the load can be quickly started and stopped when needed.
2. **Power management**: In power management modules, this MOSFET is suitable for buck converters and regulators, achieving efficient energy management and reducing power consumption through its low on-resistance.
3. **Audio amplifier**: In audio amplifier circuits, QS6J1TR-VB can be used for switching and regulating audio signals, ensuring signal quality and reducing distortion.
4. **Portable devices**: Suitable as a power switch in portable devices, ensuring efficient switching between standby and working modes, and extending the battery life of the device.
5. **LED drive circuit**: In LED drive circuits, this device can efficiently control the switching and brightness adjustment of LEDs, providing stable power for LED lighting.
Through its excellent performance and adaptability, QS6J1TR-VB can perform well in various electronic applications, providing designers with a reliable choice.
1. **Load switch**: QS6J1TR-VB can be used in load switch circuits to provide efficient switch control in low voltage applications, ensuring that the load can be quickly started and stopped when needed.
2. **Power management**: In power management modules, this MOSFET is suitable for buck converters and regulators, achieving efficient energy management and reducing power consumption through its low on-resistance.
3. **Audio amplifier**: In audio amplifier circuits, QS6J1TR-VB can be used for switching and regulating audio signals, ensuring signal quality and reducing distortion.
4. **Portable devices**: Suitable as a power switch in portable devices, ensuring efficient switching between standby and working modes, and extending the battery life of the device.
5. **LED drive circuit**: In LED drive circuits, this device can efficiently control the switching and brightness adjustment of LEDs, providing stable power for LED lighting.
Through its excellent performance and adaptability, QS6J1TR-VB can perform well in various electronic applications, providing designers with a reliable choice.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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