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QM6006B-VB Product details
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QM6006B-VB Product Introduction
QM6006B-VB is a high-efficiency N-channel MOSFET designed in TO263 package for high current and high voltage applications. Its maximum drain-to-source voltage (VDS) is 60V and the gate voltage (VGS) is rated at ±20V. The device's on-resistance (RDS(ON)) is 12mΩ at a gate voltage of 4.5V and drops to 11mΩ at 10V, ensuring low energy loss and high efficiency under high load conditions. The QM6006B-VB is particularly suitable for power management, switching power supplies and applications requiring fast switching.
QM6006B-VB is a high-efficiency N-channel MOSFET designed in TO263 package for high current and high voltage applications. Its maximum drain-to-source voltage (VDS) is 60V and the gate voltage (VGS) is rated at ±20V. The device's on-resistance (RDS(ON)) is 12mΩ at a gate voltage of 4.5V and drops to 11mΩ at 10V, ensuring low energy loss and high efficiency under high load conditions. The QM6006B-VB is particularly suitable for power management, switching power supplies and applications requiring fast switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: QM6006B-VB
- **Package**: TO263
- **Configuration**: Single N channel
- **Maximum drain voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 12mΩ
- @ VGS=10V: 11mΩ
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
- **Model**: QM6006B-VB
- **Package**: TO263
- **Configuration**: Single N channel
- **Maximum drain voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 12mΩ
- @ VGS=10V: 11mΩ
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Switching power supply**:
- QM6006B-VB is commonly used in AC-DC and DC-DC converters. As a switching element, it can significantly improve conversion efficiency and reduce energy loss, meeting the high efficiency requirements of modern power supply design.
2. **Motor drive**:
- In motor drive applications, this MOSFET can be used to efficiently control the start and operation of the motor, suitable for electric vehicles, automation equipment and power tools.
3. **LED lighting**:
- QM6006B-VB is suitable for LED drive circuits. Through fast switching and efficient control, the brightness of LED lighting can be adjusted to improve the energy efficiency of the overall lighting system.
4. **Load switch**:
- This device is very suitable for use as a load switch in portable and home electronic devices to help optimize power consumption and extend battery life.
5. **Communication equipment**:
- In RF amplifier and high-frequency switching applications, QM6006B-VB can provide good signal integrity and system performance due to its low on-resistance and fast switching capability, making it suitable for use in communication modules.
With these features, QM6006B-VB demonstrates a wide range of application potential in a variety of electronic designs, especially in situations where high performance and high efficiency are required.
1. **Switching power supply**:
- QM6006B-VB is commonly used in AC-DC and DC-DC converters. As a switching element, it can significantly improve conversion efficiency and reduce energy loss, meeting the high efficiency requirements of modern power supply design.
2. **Motor drive**:
- In motor drive applications, this MOSFET can be used to efficiently control the start and operation of the motor, suitable for electric vehicles, automation equipment and power tools.
3. **LED lighting**:
- QM6006B-VB is suitable for LED drive circuits. Through fast switching and efficient control, the brightness of LED lighting can be adjusted to improve the energy efficiency of the overall lighting system.
4. **Load switch**:
- This device is very suitable for use as a load switch in portable and home electronic devices to help optimize power consumption and extend battery life.
5. **Communication equipment**:
- In RF amplifier and high-frequency switching applications, QM6006B-VB can provide good signal integrity and system performance due to its low on-resistance and fast switching capability, making it suitable for use in communication modules.
With these features, QM6006B-VB demonstrates a wide range of application potential in a variety of electronic designs, especially in situations where high performance and high efficiency are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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