Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
30V |
|
1.7V |
26A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
30V |
|
1.7V |
26A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
30V |
|
1.7V |
26A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3)-B |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: QM3202M3-VB
- **Package**: DFN8(3x3)-B
- **Configuration**: Dual N+N-Channel
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**: 20mΩ@VGS=4.5V, 16mΩ@VGS=10V
- **Maximum leakage current (ID)**: 26A
- **Technology**: Trench
Domain and module applications：
Applications: QM3202M3-VB is widely used in DC-DC converters, load switches, power management modules and other fields. Due to its dual N-channel design, it can achieve efficient current management and is particularly suitable for applications that require high efficiency, such as portable devices, consumer electronics and power tools. At the same time, the excellent heat dissipation performance of this MOSFET makes it excellent in automotive electronics and industrial control systems, ensuring stable operation of the equipment in various environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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