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QM2N7002E3K1-VB Product details
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Product Introduction
**QM2N7002E3K1-VB** is a high-performance single N-channel MOSFET in a compact SOT23-3 package, designed for low voltage and low current applications. Its maximum drain-source voltage (VDS) is 60V, and it can withstand a continuous current of up to 0.3A, making it suitable for use in space-constrained environments. This MOSFET uses advanced Trench technology and has high conduction efficiency, which can effectively reduce energy loss and improve the overall performance of the circuit.
**QM2N7002E3K1-VB** is a high-performance single N-channel MOSFET in a compact SOT23-3 package, designed for low voltage and low current applications. Its maximum drain-source voltage (VDS) is 60V, and it can withstand a continuous current of up to 0.3A, making it suitable for use in space-constrained environments. This MOSFET uses advanced Trench technology and has high conduction efficiency, which can effectively reduce energy loss and improve the overall performance of the circuit.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Model**: QM2N7002E3K1-VB
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 0.3A
- **Technology**: Trench
- **Model**: QM2N7002E3K1-VB
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Mobile electronic devices**: QM2N7002E3K1-VB is widely used in power management circuits of mobile devices such as smartphones and tablets. As a power switch and current controller, it can effectively improve battery efficiency and endurance.
2. **LED lighting**: This MOSFET is suitable for LED driver circuits, providing stable current output under low voltage conditions to ensure the brightness consistency of LEDs. It is commonly used in applications such as indoor lighting and electronic display screens.
3. **Power adapter**: It can be used for small power adapters and chargers. It can efficiently control the output current to ensure the stability and safety of the charging process. It is especially suitable for USB charging devices.
4. **Signal switch**: In various signal switch circuits, QM2N7002E3K1-VB can effectively control the switch state of the signal path. It is widely used in fields such as sensors and small motor control.
5. **Household appliances**: This MOSFET can be used in the control circuits of small household appliances such as microwave ovens and washing machines to ensure high efficiency and stability in different working modes, which helps to reduce energy consumption.
Through the above parameters and application examples, QM2N7002E3K1-VB MOSFET demonstrates its superior performance and wide applicability in a variety of low current applications.
1. **Mobile electronic devices**: QM2N7002E3K1-VB is widely used in power management circuits of mobile devices such as smartphones and tablets. As a power switch and current controller, it can effectively improve battery efficiency and endurance.
2. **LED lighting**: This MOSFET is suitable for LED driver circuits, providing stable current output under low voltage conditions to ensure the brightness consistency of LEDs. It is commonly used in applications such as indoor lighting and electronic display screens.
3. **Power adapter**: It can be used for small power adapters and chargers. It can efficiently control the output current to ensure the stability and safety of the charging process. It is especially suitable for USB charging devices.
4. **Signal switch**: In various signal switch circuits, QM2N7002E3K1-VB can effectively control the switch state of the signal path. It is widely used in fields such as sensors and small motor control.
5. **Household appliances**: This MOSFET can be used in the control circuits of small household appliances such as microwave ovens and washing machines to ensure high efficiency and stability in different working modes, which helps to reduce energy consumption.
Through the above parameters and application examples, QM2N7002E3K1-VB MOSFET demonstrates its superior performance and wide applicability in a variety of low current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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