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QM2416J-VB Product details
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Product Introduction: QM2416J-VB
QM2416J-VB is a high-efficiency single N-channel MOSFET in a SOT89 package, designed for low voltage and medium power applications. Its maximum drain-to-source voltage (VDS) is 30V, supporting a drain current (ID) of up to 6.8A. At a gate voltage (VGS) of 2.5V, the on-resistance (RDS(ON)) is 30mΩ, and at a VGS of 4.5V it is 22mΩ. These features make the QM2416J-VB perform well in a variety of power management and switching applications, especially for compact electronic devices.
QM2416J-VB is a high-efficiency single N-channel MOSFET in a SOT89 package, designed for low voltage and medium power applications. Its maximum drain-to-source voltage (VDS) is 30V, supporting a drain current (ID) of up to 6.8A. At a gate voltage (VGS) of 2.5V, the on-resistance (RDS(ON)) is 30mΩ, and at a VGS of 4.5V it is 22mΩ. These features make the QM2416J-VB perform well in a variety of power management and switching applications, especially for compact electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
Detailed parameter description:
- **Model**: QM2416J-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain to source voltage (VDS)**: 30V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum leakage current (ID)**: 6.8A
- **Technology**: Trench
- **Model**: QM2416J-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain to source voltage (VDS)**: 30V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum leakage current (ID)**: 6.8A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples:
1. **Portable electronic devices**: QM2416J-VB is widely used in power management of portable devices, which can efficiently control power switching and improve the energy efficiency and endurance of the equipment.
2. **LED drive circuit**: In LED drive applications, this MOSFET can efficiently control the current of LED, improve light efficiency and reduce power consumption, and is suitable for various lighting solutions.
3. **Battery management system**: QM2416J-VB can be used in battery management systems to control the charging and discharging process to ensure the safety and efficient use of batteries.
4. **Power switch**: This MOSFET performs well in power switch applications and can achieve fast switching, which is suitable for power management of household appliances and industrial equipment.
5. **Communication equipment**: In communication equipment, QM2416J-VB can effectively support signal processing and power control, and improve the stability and performance of the system.
1. **Portable electronic devices**: QM2416J-VB is widely used in power management of portable devices, which can efficiently control power switching and improve the energy efficiency and endurance of the equipment.
2. **LED drive circuit**: In LED drive applications, this MOSFET can efficiently control the current of LED, improve light efficiency and reduce power consumption, and is suitable for various lighting solutions.
3. **Battery management system**: QM2416J-VB can be used in battery management systems to control the charging and discharging process to ensure the safety and efficient use of batteries.
4. **Power switch**: This MOSFET performs well in power switch applications and can achieve fast switching, which is suitable for power management of household appliances and industrial equipment.
5. **Communication equipment**: In communication equipment, QM2416J-VB can effectively support signal processing and power control, and improve the stability and performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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