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PSMN9R5-100XS-VB Product details
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Product Introduction
**PSMN9R5-100XS-VB** is a high-performance single N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 100V, and it can withstand a continuous current of up to 90A, making it particularly suitable for power management and drive circuits that require high efficiency and low conduction losses. This MOSFET uses advanced Trench technology to ensure excellent conduction performance under different operating conditions, significantly reducing energy loss and heat generation.
**PSMN9R5-100XS-VB** is a high-performance single N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 100V, and it can withstand a continuous current of up to 90A, making it particularly suitable for power management and drive circuits that require high efficiency and low conduction losses. This MOSFET uses advanced Trench technology to ensure excellent conduction performance under different operating conditions, significantly reducing energy loss and heat generation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: PSMN9R5-100XS-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 90A
- **Technology**: Trench
- **Model**: PSMN9R5-100XS-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 90A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Switching power supply**: PSMN9R5-100XS-VB is widely used in switching power supplies (SMPS), which can provide efficient power conversion under high load conditions, especially suitable for computer power supplies, servers and consumer electronics.
2. **Electric vehicles**: In the battery management system of electric vehicles, this MOSFET can handle currents up to 90A, ensuring high efficiency in the battery charging and discharging process, and improving the battery life and performance.
3. **Industrial automation**: Suitable for power management and drive circuits in various industrial equipment, PSMN9R5-100XS-VB can work stably in high-power environments, improve equipment reliability, and is suitable for motor control and automation equipment.
4. **Power adapter**: In high-efficiency power adapters and fast chargers, PSMN9R5-100XS-VB can reduce power consumption, improve overall energy efficiency, and meet the needs of modern electronic devices for high power and high efficiency.
5. **Audio and RF amplifiers**: This MOSFET is also suitable for high-frequency power amplifiers, capable of processing high-power signals, and is suitable for use in audio and communication equipment to ensure the stability and efficiency of signal transmission.
Through the above parameters and application examples, the PSMN9R5-100XS-VB MOSFET demonstrates its superior performance and wide applicability in a variety of high-power applications.
1. **Switching power supply**: PSMN9R5-100XS-VB is widely used in switching power supplies (SMPS), which can provide efficient power conversion under high load conditions, especially suitable for computer power supplies, servers and consumer electronics.
2. **Electric vehicles**: In the battery management system of electric vehicles, this MOSFET can handle currents up to 90A, ensuring high efficiency in the battery charging and discharging process, and improving the battery life and performance.
3. **Industrial automation**: Suitable for power management and drive circuits in various industrial equipment, PSMN9R5-100XS-VB can work stably in high-power environments, improve equipment reliability, and is suitable for motor control and automation equipment.
4. **Power adapter**: In high-efficiency power adapters and fast chargers, PSMN9R5-100XS-VB can reduce power consumption, improve overall energy efficiency, and meet the needs of modern electronic devices for high power and high efficiency.
5. **Audio and RF amplifiers**: This MOSFET is also suitable for high-frequency power amplifiers, capable of processing high-power signals, and is suitable for use in audio and communication equipment to ensure the stability and efficiency of signal transmission.
Through the above parameters and application examples, the PSMN9R5-100XS-VB MOSFET demonstrates its superior performance and wide applicability in a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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