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PSMN8R7-80BS-VB Product details
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PSMN8R7-80BS-VB Product Introduction
PSMN8R7-80BS-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 80V and can withstand a leakage current of up to 120A, making it ideal for use in power management and power conversion. With its low on-resistance and excellent thermal management characteristics, PSMN8R7-80BS-VB excels in high performance and stability, and is particularly suitable for high power and high efficiency power supply designs.
PSMN8R7-80BS-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 80V and can withstand a leakage current of up to 120A, making it ideal for use in power management and power conversion. With its low on-resistance and excellent thermal management characteristics, PSMN8R7-80BS-VB excels in high performance and stability, and is particularly suitable for high power and high efficiency power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN8R7-80BS-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench technology
- **Model**: PSMN8R7-80BS-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power converter**:
PSMN8R7-80BS-VB is widely used in high-efficiency DC-DC converters, which can achieve extremely high power conversion efficiency and is suitable for industrial power supplies, server power supplies and consumer electronics products to reduce energy loss.
2. **Electric vehicles**:
In the battery management and motor drive systems of electric vehicles, this MOSFET supports high current and fast switching, improves the overall energy efficiency and power performance of the vehicle, and ensures reliability and safety under different working conditions.
3. **Inverter**:
PSMN8R7-80BS-VB can be used as a key power switch in photovoltaic inverters and uninterruptible power supply (UPS) systems to ensure efficient power conversion and stability to meet the application needs of renewable energy.
4. **Power tools**:
In the power management of power tools, the device provides high current support to ensure stable operation of the tool under high load, improve safety and efficiency, and adapt to diverse working scenarios.
5. **LED drive circuit**:
PSMN8R7-80BS-VB is suitable for the drive circuit of high-power LED lighting. It can efficiently control the current output, ensure the efficiency and stability of the lighting system, and meet the needs of modern lighting.
Through these applications, PSMN8R7-80BS-VB has demonstrated its wide applicability and excellent performance in multiple fields, becoming an important part of high-efficiency power supply design.
1. **Power converter**:
PSMN8R7-80BS-VB is widely used in high-efficiency DC-DC converters, which can achieve extremely high power conversion efficiency and is suitable for industrial power supplies, server power supplies and consumer electronics products to reduce energy loss.
2. **Electric vehicles**:
In the battery management and motor drive systems of electric vehicles, this MOSFET supports high current and fast switching, improves the overall energy efficiency and power performance of the vehicle, and ensures reliability and safety under different working conditions.
3. **Inverter**:
PSMN8R7-80BS-VB can be used as a key power switch in photovoltaic inverters and uninterruptible power supply (UPS) systems to ensure efficient power conversion and stability to meet the application needs of renewable energy.
4. **Power tools**:
In the power management of power tools, the device provides high current support to ensure stable operation of the tool under high load, improve safety and efficiency, and adapt to diverse working scenarios.
5. **LED drive circuit**:
PSMN8R7-80BS-VB is suitable for the drive circuit of high-power LED lighting. It can efficiently control the current output, ensure the efficiency and stability of the lighting system, and meet the needs of modern lighting.
Through these applications, PSMN8R7-80BS-VB has demonstrated its wide applicability and excellent performance in multiple fields, becoming an important part of high-efficiency power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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