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PSMN7R6-60BS-VB Product details
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Product Introduction
**PSMN7R6-60BS-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 60V, and it can withstand up to 150A of continuous current, making it very suitable for power management and drive circuits. This MOSFET uses advanced Trench technology to ensure excellent conduction performance under various operating conditions, significantly reducing energy loss and heat generation, making it excellent in high-efficiency applications.
**PSMN7R6-60BS-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 60V, and it can withstand up to 150A of continuous current, making it very suitable for power management and drive circuits. This MOSFET uses advanced Trench technology to ensure excellent conduction performance under various operating conditions, significantly reducing energy loss and heat generation, making it excellent in high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN7R6-60BS-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 150A
- **Technology**: Trench
- **Model**: PSMN7R6-60BS-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Switching power supply**: PSMN7R6-60BS-VB is widely used in high-efficiency switching power supplies (SMPS), which can provide efficient power conversion under high load conditions and is suitable for computer power supplies, servers and consumer electronics.
2. **Electric vehicles**: In the battery management and drive system of electric vehicles, this MOSFET can effectively handle currents up to 150A, ensure efficient energy transmission and management, and optimize the battery charging and discharging process.
3. **Industrial equipment**: Suitable for power management and drive circuits in industrial automation, it can work stably in high-power environments, improve equipment reliability and energy efficiency, and is suitable for motor control and automation systems.
4. **Power adapter**: In high-efficiency power adapters and fast chargers, PSMN7R6-60BS-VB can significantly reduce power consumption, improve overall energy efficiency, and meet the stringent requirements of modern electronic devices for high power and high efficiency.
5. **Audio amplifier**: This MOSFET is also suitable for high-frequency power amplifiers, supports the processing of high-power signals, and is suitable for use in audio equipment and communication equipment to ensure the stability and efficiency of signal transmission.
Through the above parameters and application examples, PSMN7R6-60BS-VB MOSFET demonstrates its excellent performance and wide applicability in a variety of high-power applications.
1. **Switching power supply**: PSMN7R6-60BS-VB is widely used in high-efficiency switching power supplies (SMPS), which can provide efficient power conversion under high load conditions and is suitable for computer power supplies, servers and consumer electronics.
2. **Electric vehicles**: In the battery management and drive system of electric vehicles, this MOSFET can effectively handle currents up to 150A, ensure efficient energy transmission and management, and optimize the battery charging and discharging process.
3. **Industrial equipment**: Suitable for power management and drive circuits in industrial automation, it can work stably in high-power environments, improve equipment reliability and energy efficiency, and is suitable for motor control and automation systems.
4. **Power adapter**: In high-efficiency power adapters and fast chargers, PSMN7R6-60BS-VB can significantly reduce power consumption, improve overall energy efficiency, and meet the stringent requirements of modern electronic devices for high power and high efficiency.
5. **Audio amplifier**: This MOSFET is also suitable for high-frequency power amplifiers, supports the processing of high-power signals, and is suitable for use in audio equipment and communication equipment to ensure the stability and efficiency of signal transmission.
Through the above parameters and application examples, PSMN7R6-60BS-VB MOSFET demonstrates its excellent performance and wide applicability in a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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