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PSMN7R0-100ES-VB Product details
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Product Introduction
PSMN7R0-100ES-VB is a high-performance N-channel MOSFET in a TO262 package, designed for high voltage and high current applications. With a withstand voltage (VDS) of 100V and a maximum continuous current (ID) of up to 100A, the device is suitable for a variety of demanding applications. Its on-resistance performance is excellent, at 10mΩ (@ VGS=4.5V) and 9mΩ (@ VGS=10V), respectively, ensuring minimal energy loss under high current conditions. The threshold voltage (Vth) is 2.5V, which is suitable for a variety of driving conditions. Using Trench technology, the PSMN7R0-100ES-VB can provide low loss and high efficiency in high-frequency switching applications, and is widely used in power management, inverters, motor drives and other fields.
PSMN7R0-100ES-VB is a high-performance N-channel MOSFET in a TO262 package, designed for high voltage and high current applications. With a withstand voltage (VDS) of 100V and a maximum continuous current (ID) of up to 100A, the device is suitable for a variety of demanding applications. Its on-resistance performance is excellent, at 10mΩ (@ VGS=4.5V) and 9mΩ (@ VGS=10V), respectively, ensuring minimal energy loss under high current conditions. The threshold voltage (Vth) is 2.5V, which is suitable for a variety of driving conditions. Using Trench technology, the PSMN7R0-100ES-VB can provide low loss and high efficiency in high-frequency switching applications, and is widely used in power management, inverters, motor drives and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: PSMN7R0-100ES-VB
- **Package**: TO262
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 100A
- **Technology**: Trench technology
- **Model**: PSMN7R0-100ES-VB
- **Package**: TO262
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management**
- PSMN7R0-100ES-VB is widely used in efficient DC-DC converters and switching power supplies. Its low on-resistance helps improve energy efficiency and reduce energy loss, making it suitable for efficient power solutions.
2. **Inverter**
- This MOSFET performs well in solar inverters and uninterruptible power supply (UPS) systems, improving energy efficiency and response speed, ensuring reliability and efficiency of power conversion.
3. **Motor drive**
- In motor control applications, PSMN7R0-100ES-VB supports high current and fast switching, and is suitable for drive systems of electric vehicles, industrial motors, and home appliance motors to ensure stable power transmission.
4. **LED drive**
- This device can be used in LED drive circuits to provide stable current output, ensuring high brightness and extended service life of LED modules, and is suitable for various lighting applications.
5. **Consumer Electronics**
- In consumer electronics, PSMN7R0-100ES-VB is used as a switching element to achieve efficient power management. It is widely used in chargers and power adapters to meet the high performance requirements of modern devices.
These applications demonstrate the wide applicability of PSMN7R0-100ES-VB in high-performance and high-reliability applications, suitable for a variety of industrial and consumer electronics fields.
1. **Power management**
- PSMN7R0-100ES-VB is widely used in efficient DC-DC converters and switching power supplies. Its low on-resistance helps improve energy efficiency and reduce energy loss, making it suitable for efficient power solutions.
2. **Inverter**
- This MOSFET performs well in solar inverters and uninterruptible power supply (UPS) systems, improving energy efficiency and response speed, ensuring reliability and efficiency of power conversion.
3. **Motor drive**
- In motor control applications, PSMN7R0-100ES-VB supports high current and fast switching, and is suitable for drive systems of electric vehicles, industrial motors, and home appliance motors to ensure stable power transmission.
4. **LED drive**
- This device can be used in LED drive circuits to provide stable current output, ensuring high brightness and extended service life of LED modules, and is suitable for various lighting applications.
5. **Consumer Electronics**
- In consumer electronics, PSMN7R0-100ES-VB is used as a switching element to achieve efficient power management. It is widely used in chargers and power adapters to meet the high performance requirements of modern devices.
These applications demonstrate the wide applicability of PSMN7R0-100ES-VB in high-performance and high-reliability applications, suitable for a variety of industrial and consumer electronics fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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