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PSMN5R0-80BS-VB Product details
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Product Introduction
PSMN5R0-80BS-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, suitable for a variety of power management and switching applications that require high voltage resistance. The device has a low on-resistance (RDS(ON)), which is 10mΩ and 6mΩ at a gate voltage of 4.5V and 10V, respectively, significantly reducing switching losses. The maximum drain current (ID) can reach 120A, which can meet high power requirements and is widely used in various high-performance electronic devices.
PSMN5R0-80BS-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, suitable for a variety of power management and switching applications that require high voltage resistance. The device has a low on-resistance (RDS(ON)), which is 10mΩ and 6mΩ at a gate voltage of 4.5V and 10V, respectively, significantly reducing switching losses. The maximum drain current (ID) can reach 120A, which can meet high power requirements and is widely used in various high-performance electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN5R0-80BS-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench technology
- **Model**: PSMN5R0-80BS-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**: PSMN5R0-80BS-VB is very suitable for switch mode power supply (SMPS). Its low on-resistance can effectively reduce energy loss and improve system efficiency. It is particularly suitable for high-efficiency power conversion applications.
2. **Motor drive**: In the motor control module, this MOSFET can stably drive high-current motors to ensure reliable operation under high load conditions, while reducing heat generation and improving system stability.
3. **Battery management system**: Suitable for battery protection and charging management, it can maintain excellent performance under high current and high voltage to ensure a safe and efficient charging process.
4. **DC-DC converter**: PSMN5R0-80BS-VB can be used as an efficient switch in the DC-DC converter to help improve the overall conversion efficiency and reduce energy loss. It is widely used in various power supply designs.
5. **LED drive**: In the LED drive circuit, this MOSFET acts as an efficient switch, which can provide stable current to ensure the brightness and life of the LED, and is suitable for a variety of lighting applications.
With its excellent performance, PSMN5R0-80BS-VB excels in high-power and high-efficiency electronic applications, becoming an ideal choice for designers and engineers.
1. **Power management**: PSMN5R0-80BS-VB is very suitable for switch mode power supply (SMPS). Its low on-resistance can effectively reduce energy loss and improve system efficiency. It is particularly suitable for high-efficiency power conversion applications.
2. **Motor drive**: In the motor control module, this MOSFET can stably drive high-current motors to ensure reliable operation under high load conditions, while reducing heat generation and improving system stability.
3. **Battery management system**: Suitable for battery protection and charging management, it can maintain excellent performance under high current and high voltage to ensure a safe and efficient charging process.
4. **DC-DC converter**: PSMN5R0-80BS-VB can be used as an efficient switch in the DC-DC converter to help improve the overall conversion efficiency and reduce energy loss. It is widely used in various power supply designs.
5. **LED drive**: In the LED drive circuit, this MOSFET acts as an efficient switch, which can provide stable current to ensure the brightness and life of the LED, and is suitable for a variety of lighting applications.
With its excellent performance, PSMN5R0-80BS-VB excels in high-power and high-efficiency electronic applications, becoming an ideal choice for designers and engineers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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