中文
English
PSMN5R0-100XS-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**PSMN5R0-100XS-VB** is a high-efficiency single N-channel MOSFET in TO220F package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, and it can withstand a continuous current of up to 120A, making it very suitable for power management and drive circuits. This MOSFET uses advanced Trench technology to ensure excellent conduction performance under different operating conditions, significantly reducing energy loss and heat generation, and meeting the high-efficiency needs of modern electronic devices.
**PSMN5R0-100XS-VB** is a high-efficiency single N-channel MOSFET in TO220F package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, and it can withstand a continuous current of up to 120A, making it very suitable for power management and drive circuits. This MOSFET uses advanced Trench technology to ensure excellent conduction performance under different operating conditions, significantly reducing energy loss and heat generation, and meeting the high-efficiency needs of modern electronic devices.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | 3.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: PSMN5R0-100XS-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.7mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 120A
- **Technology**: Trench
- **Model**: PSMN5R0-100XS-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.7mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Application areas and module examples
1. **High-efficiency power management**: PSMN5R0-100XS-VB is widely used in switching power supplies (SMPS) to provide efficient power conversion, especially suitable for computer power supplies, data centers and industrial power modules.
2. **Electric vehicles**: In the drive system of electric vehicles, this MOSFET can effectively handle currents up to 120A, ensuring efficient charging and discharging of the battery management system, improving battery performance and service life.
3. **Industrial automation**: Suitable for power management and drive circuits in various industrial equipment, able to work stably under high power loads, enhance system reliability and energy efficiency, and suitable for motor control and automation equipment.
4. **Power adapter**: In high-efficiency power adapters and fast chargers, PSMN5R0-100XS-VB can reduce power consumption, improve overall energy efficiency, and meet the high power requirements of modern electronic devices.
5. **Audio and RF amplifiers**: This MOSFET is also suitable for high-frequency power amplifiers, capable of processing high-power signals, and is suitable for use in audio and communication equipment to ensure the stability and efficiency of signal transmission.
Through the above parameters and application examples, PSMN5R0-100XS-VB MOSFET demonstrates its excellent performance and wide applicability in a variety of high-power applications.
1. **High-efficiency power management**: PSMN5R0-100XS-VB is widely used in switching power supplies (SMPS) to provide efficient power conversion, especially suitable for computer power supplies, data centers and industrial power modules.
2. **Electric vehicles**: In the drive system of electric vehicles, this MOSFET can effectively handle currents up to 120A, ensuring efficient charging and discharging of the battery management system, improving battery performance and service life.
3. **Industrial automation**: Suitable for power management and drive circuits in various industrial equipment, able to work stably under high power loads, enhance system reliability and energy efficiency, and suitable for motor control and automation equipment.
4. **Power adapter**: In high-efficiency power adapters and fast chargers, PSMN5R0-100XS-VB can reduce power consumption, improve overall energy efficiency, and meet the high power requirements of modern electronic devices.
5. **Audio and RF amplifiers**: This MOSFET is also suitable for high-frequency power amplifiers, capable of processing high-power signals, and is suitable for use in audio and communication equipment to ensure the stability and efficiency of signal transmission.
Through the above parameters and application examples, PSMN5R0-100XS-VB MOSFET demonstrates its excellent performance and wide applicability in a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
