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PSMN4R6-60BS-VB Product details
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PSMN4R6-60BS-VB Product Introduction
PSMN4R6-60BS-VB is a high-efficiency unipolar N-channel MOSFET in TO263 package, designed for medium voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 60V and can withstand a leakage current of up to 150A, making it suitable for a variety of power management and power conversion applications. Its low on-resistance and excellent thermal management characteristics enable it to excel in power supply designs that require high efficiency and stability. Using advanced Trench technology, PSMN4R6-60BS-VB has significantly improved switching speed and energy efficiency.
PSMN4R6-60BS-VB is a high-efficiency unipolar N-channel MOSFET in TO263 package, designed for medium voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 60V and can withstand a leakage current of up to 150A, making it suitable for a variety of power management and power conversion applications. Its low on-resistance and excellent thermal management characteristics enable it to excel in power supply designs that require high efficiency and stability. Using advanced Trench technology, PSMN4R6-60BS-VB has significantly improved switching speed and energy efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN4R6-60BS-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
- **Model**: PSMN4R6-60BS-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power converter**:
PSMN4R6-60BS-VB is widely used in high-efficiency DC-DC converters, and can achieve excellent power conversion efficiency. It is suitable for industrial power supplies and computer power supplies.
2. **Electric vehicles**:
This MOSFET can be used in battery management and motor drive systems of electric vehicles, supporting high current and fast switching to improve the energy efficiency and power performance of the system.
3. **Inverter**:
In photovoltaic inverters and uninterruptible power supply (UPS) systems, PSMN4R6-60BS-VB can be used as a key power switch to ensure efficient power conversion under different working conditions.
4. **Power tools**:
In the power management system of power tools, PSMN4R6-60BS-VB can provide reliable high current support to ensure stable operation of the tool under high load and improve safety in use.
5. **LED drive circuit**:
This device is suitable for the drive circuit of high-power LED lighting. It can provide precise current control, ensure the efficiency and stability of the lighting system, and meet the needs of modern lighting applications.
Through these applications, PSMN4R6-60BS-VB shows its wide applicability and excellent performance in multiple fields, becoming an important part of high-efficiency power supply design.
1. **Power converter**:
PSMN4R6-60BS-VB is widely used in high-efficiency DC-DC converters, and can achieve excellent power conversion efficiency. It is suitable for industrial power supplies and computer power supplies.
2. **Electric vehicles**:
This MOSFET can be used in battery management and motor drive systems of electric vehicles, supporting high current and fast switching to improve the energy efficiency and power performance of the system.
3. **Inverter**:
In photovoltaic inverters and uninterruptible power supply (UPS) systems, PSMN4R6-60BS-VB can be used as a key power switch to ensure efficient power conversion under different working conditions.
4. **Power tools**:
In the power management system of power tools, PSMN4R6-60BS-VB can provide reliable high current support to ensure stable operation of the tool under high load and improve safety in use.
5. **LED drive circuit**:
This device is suitable for the drive circuit of high-power LED lighting. It can provide precise current control, ensure the efficiency and stability of the lighting system, and meet the needs of modern lighting applications.
Through these applications, PSMN4R6-60BS-VB shows its wide applicability and excellent performance in multiple fields, becoming an important part of high-efficiency power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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