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PSMN4R4-80BS-VB Product details
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Product Introduction
**PSMN4R4-80BS-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, and it can withstand a continuous current of up to 120A, making it ideal for power management and drive circuits that require high efficiency and low conduction losses. This MOSFET uses advanced Trench technology to ensure superior conduction performance under different operating conditions, significantly reducing energy loss and heat generation.
**PSMN4R4-80BS-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, and it can withstand a continuous current of up to 120A, making it ideal for power management and drive circuits that require high efficiency and low conduction losses. This MOSFET uses advanced Trench technology to ensure superior conduction performance under different operating conditions, significantly reducing energy loss and heat generation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN4R4-80BS-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 120A
- **Technology**: Trench
- **Model**: PSMN4R4-80BS-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Switching power supply**: PSMN4R4-80BS-VB is widely used in high-efficiency switching power supplies (SMPS), which can provide efficient power conversion and is suitable for computer power supplies, industrial power supplies and consumer electronics.
2. **Electric vehicles**: In the battery management and drive system of electric vehicles, this MOSFET can handle currents up to 120A, ensuring efficient energy transmission and management, and improving the efficiency of battery charging and discharging.
3. **Industrial automation**: Suitable for power management and drive circuits of various industrial equipment, PSMN4R4-80BS-VB can work stably under high power loads, enhancing the reliability and performance of the system.
4. **Power adapter**: In efficient power adapters and fast chargers, it can significantly reduce power consumption, improve overall energy efficiency, and meet the high power requirements of modern electronic devices.
5. **Audio amplifier**: This MOSFET is also suitable for high-frequency power amplifiers and RF applications, supporting the processing of high-power signals and ensuring stable signal transmission of audio and communication equipment.
Through the above parameters and application examples, PSMN4R4-80BS-VB MOSFET demonstrates its superior performance and wide applicability in a variety of high-power applications.
1. **Switching power supply**: PSMN4R4-80BS-VB is widely used in high-efficiency switching power supplies (SMPS), which can provide efficient power conversion and is suitable for computer power supplies, industrial power supplies and consumer electronics.
2. **Electric vehicles**: In the battery management and drive system of electric vehicles, this MOSFET can handle currents up to 120A, ensuring efficient energy transmission and management, and improving the efficiency of battery charging and discharging.
3. **Industrial automation**: Suitable for power management and drive circuits of various industrial equipment, PSMN4R4-80BS-VB can work stably under high power loads, enhancing the reliability and performance of the system.
4. **Power adapter**: In efficient power adapters and fast chargers, it can significantly reduce power consumption, improve overall energy efficiency, and meet the high power requirements of modern electronic devices.
5. **Audio amplifier**: This MOSFET is also suitable for high-frequency power amplifiers and RF applications, supporting the processing of high-power signals and ensuring stable signal transmission of audio and communication equipment.
Through the above parameters and application examples, PSMN4R4-80BS-VB MOSFET demonstrates its superior performance and wide applicability in a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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