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PSMN4R3-100ES-VB Product details
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PSMN4R3-100ES-VB Product Introduction
PSMN4R3-100ES-VB is a high-efficiency unipolar N-channel MOSFET in TO262 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 100V and can withstand a leakage current of up to 100A, making it ideal for use in power management and power conversion. Its low on-resistance and excellent thermal performance make it an excellent choice for applications that require high efficiency and stability, especially for harsh working conditions.
PSMN4R3-100ES-VB is a high-efficiency unipolar N-channel MOSFET in TO262 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 100V and can withstand a leakage current of up to 100A, making it ideal for use in power management and power conversion. Its low on-resistance and excellent thermal performance make it an excellent choice for applications that require high efficiency and stability, especially for harsh working conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: PSMN4R3-100ES-VB
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
- **Model**: PSMN4R3-100ES-VB
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power converter**:
PSMN4R3-100ES-VB performs well in DC-DC converters, enabling efficient power conversion and reducing energy loss, and is suitable for high-power applications such as server power supplies and industrial power supplies.
2. **Electric vehicles**:
In the power system of electric vehicles, this MOSFET can be used as a core component for motor drive and battery management, supporting high current and fast switching to improve overall efficiency and performance.
3. **Inverter**:
In photovoltaic inverters and uninterruptible power supply (UPS) systems, PSMN4R3-100ES-VB can achieve efficient power conversion and ensure the stability and reliability of the system under different loads.
4. **Power tools**:
This device can be used for power management of power tools, providing high current support to ensure stable performance of the tool under high load conditions, and improve safety and efficiency of use.
5. **Smart Home Devices**:
In smart home devices, PSMN4R3-100ES-VB can be used to control high-power loads, ensure safe and efficient energy management, and meet the intelligent needs of modern homes.
Through these applications, PSMN4R3-100ES-VB demonstrates its wide applicability and excellent performance in various fields, becoming an important part of high-efficiency power supply design.
1. **Power converter**:
PSMN4R3-100ES-VB performs well in DC-DC converters, enabling efficient power conversion and reducing energy loss, and is suitable for high-power applications such as server power supplies and industrial power supplies.
2. **Electric vehicles**:
In the power system of electric vehicles, this MOSFET can be used as a core component for motor drive and battery management, supporting high current and fast switching to improve overall efficiency and performance.
3. **Inverter**:
In photovoltaic inverters and uninterruptible power supply (UPS) systems, PSMN4R3-100ES-VB can achieve efficient power conversion and ensure the stability and reliability of the system under different loads.
4. **Power tools**:
This device can be used for power management of power tools, providing high current support to ensure stable performance of the tool under high load conditions, and improve safety and efficiency of use.
5. **Smart Home Devices**:
In smart home devices, PSMN4R3-100ES-VB can be used to control high-power loads, ensure safe and efficient energy management, and meet the intelligent needs of modern homes.
Through these applications, PSMN4R3-100ES-VB demonstrates its wide applicability and excellent performance in various fields, becoming an important part of high-efficiency power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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