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PSMN3R4-30BLE-VB Product details
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Product Introduction
PSMN3R4-30BLE-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for low voltage, high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of power management and switching applications. The threshold voltage (Vth) of the device is 1.7V, ensuring that it can be turned on at a lower gate voltage. At gate voltages of 4.5V and 10V, the on-resistance (RDS(ON)) is 3.2mΩ and 2.3mΩ respectively, significantly reducing power consumption. The maximum drain current (ID) reaches 150A, making it an excellent performer in high power applications.
PSMN3R4-30BLE-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for low voltage, high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of power management and switching applications. The threshold voltage (Vth) of the device is 1.7V, ensuring that it can be turned on at a lower gate voltage. At gate voltages of 4.5V and 10V, the on-resistance (RDS(ON)) is 3.2mΩ and 2.3mΩ respectively, significantly reducing power consumption. The maximum drain current (ID) reaches 150A, making it an excellent performer in high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN3R4-30BLE-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
- **Model**: PSMN3R4-30BLE-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**: PSMN3R4-30BLE-VB is ideal for switch mode power supplies (SMPS). Its low on-resistance helps reduce power consumption and improve energy efficiency, especially for demanding power conversion applications.
2. **Motor drive**: In motor control modules, this MOSFET can efficiently drive high-power motors, ensure stable operation and reduce heat generation, and improve system reliability.
3. **Battery management system**: Suitable for battery protection and charging management, it can maintain good performance under high current conditions and ensure a safe and efficient charging process.
4. **DC-DC converter**: PSMN3R4-30BLE-VB can be used as an efficient switch in DC-DC converters to help improve overall conversion efficiency and reduce energy loss. It is widely used in various power supply designs.
5. **LED drive**: In LED drive circuits, this MOSFET can be used as an efficient switch to provide stable current, ensure reliable brightness and long life of LEDs, and is suitable for various lighting solutions.
With its superior performance, PSMN3R4-30BLE-VB performs well in high-power and high-efficiency electronic applications and is an ideal choice for designers.
1. **Power management**: PSMN3R4-30BLE-VB is ideal for switch mode power supplies (SMPS). Its low on-resistance helps reduce power consumption and improve energy efficiency, especially for demanding power conversion applications.
2. **Motor drive**: In motor control modules, this MOSFET can efficiently drive high-power motors, ensure stable operation and reduce heat generation, and improve system reliability.
3. **Battery management system**: Suitable for battery protection and charging management, it can maintain good performance under high current conditions and ensure a safe and efficient charging process.
4. **DC-DC converter**: PSMN3R4-30BLE-VB can be used as an efficient switch in DC-DC converters to help improve overall conversion efficiency and reduce energy loss. It is widely used in various power supply designs.
5. **LED drive**: In LED drive circuits, this MOSFET can be used as an efficient switch to provide stable current, ensure reliable brightness and long life of LEDs, and is suitable for various lighting solutions.
With its superior performance, PSMN3R4-30BLE-VB performs well in high-power and high-efficiency electronic applications and is an ideal choice for designers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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