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PSMN2R8-80BS-VB Product details

Product introduction:

PSMN2R8-80BS-VB Product Introduction

PSMN2R8-80BS-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 80V and can withstand a leakage current of up to 230A, making it suitable for switching applications that require high efficiency and low heat generation. Using advanced Trench technology, this MOSFET provides extremely low on-resistance, enabling excellent energy efficiency performance under high power conditions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 80V 3V 230A 3.1mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 80V 3V 230A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 80V 3V 230A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N

Detailed parameter description

- **Model**: PSMN2R8-80BS-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.1mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 230A
- **Technology**: Trench technology

Domain and module applications:

Applications and module examples

1. **Power management system**:
PSMN2R8-80BS-VB is widely used in high-efficiency power management systems, such as DC-DC converters and AC-DC adapters. Its low on-resistance and high current carrying capacity ensure high efficiency and low energy loss.

2. **Electric vehicles**:
This MOSFET can be used in the power system of electric vehicles, including motor drive and battery management, supporting fast switching and high current transmission to improve the energy efficiency and performance of the entire vehicle.

3. **Industrial equipment**:
In industrial power and control systems, PSMN2R8-80BS-VB can be used as a power switch to achieve efficient power transmission and control to meet the application requirements in harsh environments.

4. **Photovoltaic inverter**:
In photovoltaic power generation systems, as the core component of the inverter, this MOSFET provides efficient power conversion to ensure maximum efficiency in solar energy utilization.

5. **LED drive circuit**:
In high-power LED lighting applications, PSMN2R8-80BS-VB can efficiently control current and provide smooth output, thus meeting the efficiency and stability requirements of modern lighting systems.

Through these applications, PSMN2R8-80BS-VB shows its wide applicability and excellent performance in various fields, becoming an important part of high-efficiency power supply design.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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