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PSMN2R7-30BL-VB Product details
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Product Introduction
PSMN2R7-30BL-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of power management and switching applications. The device has an extremely low on-resistance (RDS(ON)), which is 3.2mΩ and 2.3mΩ at a gate voltage of 4.5V and 10V, respectively, which can effectively reduce power consumption. The maximum drain current (ID) is 150A, which makes it perform well in high-power applications and suitable for systems that require high efficiency.
PSMN2R7-30BL-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of power management and switching applications. The device has an extremely low on-resistance (RDS(ON)), which is 3.2mΩ and 2.3mΩ at a gate voltage of 4.5V and 10V, respectively, which can effectively reduce power consumption. The maximum drain current (ID) is 150A, which makes it perform well in high-power applications and suitable for systems that require high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN2R7-30BL-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
- **Model**: PSMN2R7-30BL-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**: PSMN2R7-30BL-VB is ideal for switch mode power supplies (SMPS) due to its low on-resistance, which can effectively reduce energy losses and improve system efficiency.
2. **Motor drive**: In motor control modules, this MOSFET can stably drive high current motors, ensuring efficient and reliable operation while reducing heat generation.
3. **Battery management system**: Suitable for battery protection and charging management, it can maintain good performance under high current conditions to ensure safe and efficient charging.
4. **DC-DC converter**: In DC-DC converters, PSMN2R7-30BL-VB can be used as an efficient switch to help improve overall conversion efficiency and reduce energy losses.
5. **LED drive**: This MOSFET can be used as an efficient switch in LED drive circuits, providing a stable current supply, suitable for various lighting applications, ensuring good brightness and efficiency.
With its excellent performance, PSMN2R7-30BL-VB is an ideal choice in multiple high power and high efficiency electronic applications.
1. **Power management**: PSMN2R7-30BL-VB is ideal for switch mode power supplies (SMPS) due to its low on-resistance, which can effectively reduce energy losses and improve system efficiency.
2. **Motor drive**: In motor control modules, this MOSFET can stably drive high current motors, ensuring efficient and reliable operation while reducing heat generation.
3. **Battery management system**: Suitable for battery protection and charging management, it can maintain good performance under high current conditions to ensure safe and efficient charging.
4. **DC-DC converter**: In DC-DC converters, PSMN2R7-30BL-VB can be used as an efficient switch to help improve overall conversion efficiency and reduce energy losses.
5. **LED drive**: This MOSFET can be used as an efficient switch in LED drive circuits, providing a stable current supply, suitable for various lighting applications, ensuring good brightness and efficiency.
With its excellent performance, PSMN2R7-30BL-VB is an ideal choice in multiple high power and high efficiency electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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