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PSMN2R0-60ES-VB Product details
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PSMN2R0-60ES-VB Product Introduction
PSMN2R0-60ES-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for low voltage, high current applications. The MOSFET has a maximum drain-source voltage (VDS) of 30V and excellent on-resistance (RDS(ON)): 3.2mΩ at VGS of 4.5V and only 2.3mΩ at VGS of 10V, supporting a drain current (ID) of up to 150A. With its advanced Trench technology, PSMN2R0-60ES-VB provides excellent efficiency and low power consumption, suitable for a variety of power and drive applications.
PSMN2R0-60ES-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for low voltage, high current applications. The MOSFET has a maximum drain-source voltage (VDS) of 30V and excellent on-resistance (RDS(ON)): 3.2mΩ at VGS of 4.5V and only 2.3mΩ at VGS of 10V, supporting a drain current (ID) of up to 150A. With its advanced Trench technology, PSMN2R0-60ES-VB provides excellent efficiency and low power consumption, suitable for a variety of power and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN2R0-60ES-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ (@VGS=4.5V)
- 2.3mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 150A
- **Technology type**: Trench
- **Model**: PSMN2R0-60ES-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ (@VGS=4.5V)
- 2.3mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 150A
- **Technology type**: Trench
Domain and module applications：
Application fields and modules
1. **Switching Power Supply (SMPS)**:
- PSMN2R0-60ES-VB can be widely used in switching power supply design to improve power conversion efficiency, reduce energy loss, and is suitable for high-power applications.
2. **Motor Control**:
- In motor control systems, this MOSFET can switch quickly and provide stable current, thereby improving the performance and response speed of the motor.
3. **Power Tools**:
- Can be used in drive modules in power tools to support high current and fast response, ensuring the stability of the tool under high load.
4. **Chargers and Power Adapters**:
- Suitable for use in various chargers and power adapters to achieve efficient energy conversion and reduce heat generation, improving overall efficiency.
5. **LED Driver**:
- PSMN2R0-60ES-VB can be used for LED driver power to help achieve constant current output and improve the brightness and life of LEDs.
Through these applications, the PSMN2R0-60ES-VB MOSFET can provide efficient and reliable solutions for modern electronic devices and systems.
1. **Switching Power Supply (SMPS)**:
- PSMN2R0-60ES-VB can be widely used in switching power supply design to improve power conversion efficiency, reduce energy loss, and is suitable for high-power applications.
2. **Motor Control**:
- In motor control systems, this MOSFET can switch quickly and provide stable current, thereby improving the performance and response speed of the motor.
3. **Power Tools**:
- Can be used in drive modules in power tools to support high current and fast response, ensuring the stability of the tool under high load.
4. **Chargers and Power Adapters**:
- Suitable for use in various chargers and power adapters to achieve efficient energy conversion and reduce heat generation, improving overall efficiency.
5. **LED Driver**:
- PSMN2R0-60ES-VB can be used for LED driver power to help achieve constant current output and improve the brightness and life of LEDs.
Through these applications, the PSMN2R0-60ES-VB MOSFET can provide efficient and reliable solutions for modern electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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