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PSMN2R0-60BS-VB Product details
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PSMN2R0-60BS-VB Product Introduction
PSMN2R0-60BS-VB is a high-performance single N-type MOSFET in a TO263 package, designed for high voltage and high current applications. The device has a rated drain-source voltage (VDS) of 60V, enabling reliable operation in a variety of harsh operating environments. Its threshold voltage (Vth) is 3V, which ensures fast turn-on at the appropriate gate drive voltage. With low on-resistance (RDS(ON)), 7mΩ and 2.5mΩ at VGS of 4.5V and 10V respectively, this MOSFET provides excellent energy efficiency and thermal management performance.
PSMN2R0-60BS-VB is a high-performance single N-type MOSFET in a TO263 package, designed for high voltage and high current applications. The device has a rated drain-source voltage (VDS) of 60V, enabling reliable operation in a variety of harsh operating environments. Its threshold voltage (Vth) is 3V, which ensures fast turn-on at the appropriate gate drive voltage. With low on-resistance (RDS(ON)), 7mΩ and 2.5mΩ at VGS of 4.5V and 10V respectively, this MOSFET provides excellent energy efficiency and thermal management performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 4.5V
- 2.5mΩ @ VGS = 10V
- **Drain current (ID)**: 270A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 4.5V
- 2.5mΩ @ VGS = 10V
- **Drain current (ID)**: 270A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**:
PSMN2R0-60BS-VB is ideal for DC-DC converters, where it can be used as an efficient switching element to achieve stable voltage output and minimize power consumption.
2. **Electric vehicles**:
This MOSFET is widely used in battery management and drive systems in electric vehicles, and can handle high current demands, ensuring high efficiency and reliability of the system.
3. **Industrial automation**:
In industrial control systems, PSMN2R0-60BS-VB can be used as a power switch and drive circuit, providing fast response and strong current carrying capacity for a variety of drive loads.
4. **Consumer electronics**:
The device is also suitable for power management and control circuits in portable electronic devices, helping to improve energy efficiency and extend battery life.
With its excellent performance and wide applicability, PSMN2R0-60BS-VB is an ideal choice for design engineers in power management and high-efficiency applications.
1. **Power management**:
PSMN2R0-60BS-VB is ideal for DC-DC converters, where it can be used as an efficient switching element to achieve stable voltage output and minimize power consumption.
2. **Electric vehicles**:
This MOSFET is widely used in battery management and drive systems in electric vehicles, and can handle high current demands, ensuring high efficiency and reliability of the system.
3. **Industrial automation**:
In industrial control systems, PSMN2R0-60BS-VB can be used as a power switch and drive circuit, providing fast response and strong current carrying capacity for a variety of drive loads.
4. **Consumer electronics**:
The device is also suitable for power management and control circuits in portable electronic devices, helping to improve energy efficiency and extend battery life.
With its excellent performance and wide applicability, PSMN2R0-60BS-VB is an ideal choice for design engineers in power management and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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