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PSMN2R0-30BL-VB Product details
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Product Introduction
PSMN2R0-30BL-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for low voltage, high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of power management and switching applications. The device has a low on-resistance (RDS(ON)) of 3.2mΩ and 2.3mΩ at a gate voltage of 4.5V and 10V, respectively, which greatly reduces conduction losses. Its maximum drain current (ID) can reach 150A, making it an excellent performer in high power applications.
PSMN2R0-30BL-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for low voltage, high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of power management and switching applications. The device has a low on-resistance (RDS(ON)) of 3.2mΩ and 2.3mΩ at a gate voltage of 4.5V and 10V, respectively, which greatly reduces conduction losses. Its maximum drain current (ID) can reach 150A, making it an excellent performer in high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN2R0-30BL-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
- **Model**: PSMN2R0-30BL-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**: PSMN2R0-30BL-VB is ideal for efficient switch mode power supplies (SMPS), where its low on-resistance significantly reduces power consumption and improves energy efficiency.
2. **Motor drive**: In motor control applications, this MOSFET can effectively drive high current motors, ensuring stable system operation and reducing heat generation.
3. **Battery management system**: Suitable for battery protection and charging management, it can maintain good performance under high current conditions to ensure safe and efficient charging.
4. **DC-DC converter**: This MOSFET can be used as an efficient switch in a DC-DC converter, helping to improve overall conversion efficiency and reduce energy loss.
5. **LED drive**: In LED drive circuits, PSMN2R0-30BL-VB can be used as an efficient switching element to provide a stable current supply while controlling power consumption, suitable for various lighting applications.
With its excellent performance, PSMN2R0-30BL-VB performs well in multiple high-power and high-efficiency electronic applications.
1. **Power management**: PSMN2R0-30BL-VB is ideal for efficient switch mode power supplies (SMPS), where its low on-resistance significantly reduces power consumption and improves energy efficiency.
2. **Motor drive**: In motor control applications, this MOSFET can effectively drive high current motors, ensuring stable system operation and reducing heat generation.
3. **Battery management system**: Suitable for battery protection and charging management, it can maintain good performance under high current conditions to ensure safe and efficient charging.
4. **DC-DC converter**: This MOSFET can be used as an efficient switch in a DC-DC converter, helping to improve overall conversion efficiency and reduce energy loss.
5. **LED drive**: In LED drive circuits, PSMN2R0-30BL-VB can be used as an efficient switching element to provide a stable current supply while controlling power consumption, suitable for various lighting applications.
With its excellent performance, PSMN2R0-30BL-VB performs well in multiple high-power and high-efficiency electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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