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PSMN1R8-30BL-VB Product details
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PSMN1R8-30BL-VB Product Introduction
PSMN1R8-30BL-VB is a high-efficiency unipolar N-channel MOSFET in TO263 package. Designed to handle lower voltage applications, the device has excellent conduction performance and extremely low on-resistance, making it particularly suitable for high current applications. Its threshold voltage (Vth) is 1.7V, allowing it to start conducting at a lower gate voltage, thereby improving the overall efficiency of the circuit. This MOSFET is particularly suitable for modern electronic devices that require high efficiency and low power consumption.
PSMN1R8-30BL-VB is a high-efficiency unipolar N-channel MOSFET in TO263 package. Designed to handle lower voltage applications, the device has excellent conduction performance and extremely low on-resistance, making it particularly suitable for high current applications. Its threshold voltage (Vth) is 1.7V, allowing it to start conducting at a lower gate voltage, thereby improving the overall efficiency of the circuit. This MOSFET is particularly suitable for modern electronic devices that require high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN1R8-30BL-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Breakdown voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 1.6mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 1.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 260A
- **Technology**: Trench technology
- **Model**: PSMN1R8-30BL-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Breakdown voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 1.6mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 1.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 260A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**:
- PSMN1R8-30BL-VB is suitable for power management modules such as DC-DC converters and power switches, which can efficiently control the conversion and distribution of electrical energy, reduce power consumption and heat generation.
2. **Motor control**:
- This MOSFET can be used in motor drive applications, especially in motor control and drive circuits, to provide stable current and low loss to ensure efficient motor operation.
3. **Battery-powered devices**:
- In battery management systems, PSMN1R8-30BL-VB can achieve efficient charge and discharge control to ensure safe operation and long life of the battery under high load conditions.
4. **LED drive**:
- This device is suitable for LED drive circuits, which can effectively control the brightness and efficiency of LEDs to meet the needs of high-performance lighting solutions.
5. **Consumer Electronics**:
- In consumer electronics, such as mobile phone chargers and portable devices, the PSMN1R8-30BL-VB provides an ideal power switch solution to ensure high performance and miniaturization of the device.
In summary, the low on-resistance and high current carrying capability of the PSMN1R8-30BL-VB make it an ideal choice for a variety of high-performance applications.
1. **Power management**:
- PSMN1R8-30BL-VB is suitable for power management modules such as DC-DC converters and power switches, which can efficiently control the conversion and distribution of electrical energy, reduce power consumption and heat generation.
2. **Motor control**:
- This MOSFET can be used in motor drive applications, especially in motor control and drive circuits, to provide stable current and low loss to ensure efficient motor operation.
3. **Battery-powered devices**:
- In battery management systems, PSMN1R8-30BL-VB can achieve efficient charge and discharge control to ensure safe operation and long life of the battery under high load conditions.
4. **LED drive**:
- This device is suitable for LED drive circuits, which can effectively control the brightness and efficiency of LEDs to meet the needs of high-performance lighting solutions.
5. **Consumer Electronics**:
- In consumer electronics, such as mobile phone chargers and portable devices, the PSMN1R8-30BL-VB provides an ideal power switch solution to ensure high performance and miniaturization of the device.
In summary, the low on-resistance and high current carrying capability of the PSMN1R8-30BL-VB make it an ideal choice for a variety of high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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