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PSMN1R6-30BL-VB Product details
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PSMN1R6-30BL-VB Product Introduction
PSMN1R6-30BL-VB is a high-performance unipolar N-channel MOSFET in TO263 package, suitable for high current and low voltage applications. Its maximum drain-source voltage (VDS) is 30V, and it can withstand up to 260A of leakage current, which is particularly suitable for power management and power conversion applications that require fast switching and low on-resistance. The device uses advanced Trench technology to optimize switching performance and thermal management, making it excel in high-frequency and high-efficiency applications.
PSMN1R6-30BL-VB is a high-performance unipolar N-channel MOSFET in TO263 package, suitable for high current and low voltage applications. Its maximum drain-source voltage (VDS) is 30V, and it can withstand up to 260A of leakage current, which is particularly suitable for power management and power conversion applications that require fast switching and low on-resistance. The device uses advanced Trench technology to optimize switching performance and thermal management, making it excel in high-frequency and high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN1R6-30BL-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1.6mΩ @ VGS=4.5V
- 1.4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 260A
- **Technology**: Trench technology
- **Model**: PSMN1R6-30BL-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1.6mΩ @ VGS=4.5V
- 1.4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 260A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Electric vehicle power management**:
PSMN1R6-30BL-VB can be used as an efficient switching element in the power management system of electric vehicles, supporting fast switching and current control to ensure the response speed and reliability of the system.
2. **High-frequency switching power supply**:
Applicable to high-frequency switching power supply modules such as DC-DC converters and adapters, its low on-resistance and high current capability can significantly improve the efficiency of the power supply.
3. **DC motor control**:
In DC motor drive circuits, this device can be used as a power switch to provide efficient current control to meet the needs of industrial automation and robotics applications.
4. **Power amplifier**:
In audio power amplifiers and RF amplifiers, PSMN1R6-30BL-VB can improve the efficiency of signal transmission and ensure high fidelity and stability of the signal.
5. **Lighting control system**:
In intelligent lighting systems, this MOSFET can be used for LED driving and dimming control, providing precise current regulation to meet the high efficiency and energy saving requirements of modern lighting.
Through these applications, PSMN1R6-30BL-VB shows its wide applicability and excellent performance in multiple fields, becoming an important component of many high-efficiency power supply designs.
1. **Electric vehicle power management**:
PSMN1R6-30BL-VB can be used as an efficient switching element in the power management system of electric vehicles, supporting fast switching and current control to ensure the response speed and reliability of the system.
2. **High-frequency switching power supply**:
Applicable to high-frequency switching power supply modules such as DC-DC converters and adapters, its low on-resistance and high current capability can significantly improve the efficiency of the power supply.
3. **DC motor control**:
In DC motor drive circuits, this device can be used as a power switch to provide efficient current control to meet the needs of industrial automation and robotics applications.
4. **Power amplifier**:
In audio power amplifiers and RF amplifiers, PSMN1R6-30BL-VB can improve the efficiency of signal transmission and ensure high fidelity and stability of the signal.
5. **Lighting control system**:
In intelligent lighting systems, this MOSFET can be used for LED driving and dimming control, providing precise current regulation to meet the high efficiency and energy saving requirements of modern lighting.
Through these applications, PSMN1R6-30BL-VB shows its wide applicability and excellent performance in multiple fields, becoming an important component of many high-efficiency power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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