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PSMN1R2-30YLC-VB Product details
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PSMN1R2-30YLC-VB Product Introduction
PSMN1R2-30YLC-VB is a high-performance single N-channel MOSFET in SOT669 package, suitable for a variety of high-efficiency power management applications. Its maximum drain-source voltage (VDS) is 30V, capable of withstanding higher currents, and a maximum drain current (ID) of 90A, suitable for circuits requiring low on-resistance and fast switching. The device uses advanced Trench technology to provide excellent current handling capability and thermal performance.
PSMN1R2-30YLC-VB is a high-performance single N-channel MOSFET in SOT669 package, suitable for a variety of high-efficiency power management applications. Its maximum drain-source voltage (VDS) is 30V, capable of withstanding higher currents, and a maximum drain current (ID) of 90A, suitable for circuits requiring low on-resistance and fast switching. The device uses advanced Trench technology to provide excellent current handling capability and thermal performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: PSMN1R2-30YLC-VB
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 3.36mΩ @ VGS = 4.5V
- 2.8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench
- **Model**: PSMN1R2-30YLC-VB
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 3.36mΩ @ VGS = 4.5V
- 2.8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: PSMN1R2-30YLC-VB performs well in high-efficiency DC-DC converters, reducing energy loss and improving conversion efficiency.
2. **Electric vehicles**: This MOSFET is suitable for the power control system of electric vehicles to ensure efficient power conversion and transmission.
3. **Motor drive**: In motor drive applications, the high current capability of this device makes it suitable for brushless DC motor control, improving system reliability and response speed.
4. **Renewable energy**: In solar inverters, this MOSFET can help achieve efficient power conversion and optimize energy utilization.
5. **Consumer electronics**: Suitable for power management solutions in various consumer electronic devices, such as smartphones and laptops, to provide longer battery life.
Through the above features and application examples, PSMN1R2-30YLC-VB can meet the needs of various industries for efficient power solutions.
1. **Power management**: PSMN1R2-30YLC-VB performs well in high-efficiency DC-DC converters, reducing energy loss and improving conversion efficiency.
2. **Electric vehicles**: This MOSFET is suitable for the power control system of electric vehicles to ensure efficient power conversion and transmission.
3. **Motor drive**: In motor drive applications, the high current capability of this device makes it suitable for brushless DC motor control, improving system reliability and response speed.
4. **Renewable energy**: In solar inverters, this MOSFET can help achieve efficient power conversion and optimize energy utilization.
5. **Consumer electronics**: Suitable for power management solutions in various consumer electronic devices, such as smartphones and laptops, to provide longer battery life.
Through the above features and application examples, PSMN1R2-30YLC-VB can meet the needs of various industries for efficient power solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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