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PSMN1R1-40BS-VB Product details
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Product Introduction
PSMN1R1-40BS-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. Its maximum drain-source voltage (VDS) is 40V, which can withstand higher voltages, while its RDS(ON) is 2.5mΩ and 2mΩ at gate voltages of 4.5V and 10V respectively, ensuring extremely low power consumption during switching. The device has a rated current (ID) of up to 150A and is suitable for high-efficiency power management and motor drive applications.
PSMN1R1-40BS-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. Its maximum drain-source voltage (VDS) is 40V, which can withstand higher voltages, while its RDS(ON) is 2.5mΩ and 2mΩ at gate voltages of 4.5V and 10V respectively, ensuring extremely low power consumption during switching. The device has a rated current (ID) of up to 150A and is suitable for high-efficiency power management and motor drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN1R1-40BS-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
- **Model**: PSMN1R1-40BS-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**: The PSMN1R1-40BS-VB is ideal for high-efficiency power converters, providing lower conduction losses in switching power supplies, thereby improving overall energy efficiency.
2. **Motor drive**: In motor control modules, low on-resistance enables it to effectively drive high-power motors, reduce heat generation, and improve system reliability.
3. **Battery management system**: The MOSFET is suitable for battery protection and charge management, ensuring safe operation under high current conditions and improving charging efficiency.
4. **DC-DC converter**: In DC-DC converter applications, the device's high current capability and low on-resistance help reduce conversion losses and improve conversion efficiency.
5. **LED drive**: In LED drive circuits, the PSMN1R1-40BS-VB can be used as a high-efficiency switch to ensure stable power supply to LEDs while controlling power consumption.
The superior performance of this MOSFET makes it an ideal choice in modern electronic design and is suitable for a variety of high-power and high-efficiency applications.
1. **Power management**: The PSMN1R1-40BS-VB is ideal for high-efficiency power converters, providing lower conduction losses in switching power supplies, thereby improving overall energy efficiency.
2. **Motor drive**: In motor control modules, low on-resistance enables it to effectively drive high-power motors, reduce heat generation, and improve system reliability.
3. **Battery management system**: The MOSFET is suitable for battery protection and charge management, ensuring safe operation under high current conditions and improving charging efficiency.
4. **DC-DC converter**: In DC-DC converter applications, the device's high current capability and low on-resistance help reduce conversion losses and improve conversion efficiency.
5. **LED drive**: In LED drive circuits, the PSMN1R1-40BS-VB can be used as a high-efficiency switch to ensure stable power supply to LEDs while controlling power consumption.
The superior performance of this MOSFET makes it an ideal choice in modern electronic design and is suitable for a variety of high-power and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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