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PSMN130-200D-VB Product details
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PSMN130-200D-VB Product Introduction
PSMN130-200D-VB is a high-performance N-channel MOSFET in a TO252 package, suitable for applications requiring high voltage and high efficiency. The device has a maximum drain-source voltage (VDS) of 200V, suitable for a variety of power management and switching applications. Its low RDS(ON) value of 55mΩ (at VGS = 10V) results in low power losses in the on state, thereby improving overall efficiency. PSMN130-200D-VB is suitable for driving and controlling a variety of modern electronic devices.
PSMN130-200D-VB is a high-performance N-channel MOSFET in a TO252 package, suitable for applications requiring high voltage and high efficiency. The device has a maximum drain-source voltage (VDS) of 200V, suitable for a variety of power management and switching applications. Its low RDS(ON) value of 55mΩ (at VGS = 10V) results in low power losses in the on state, thereby improving overall efficiency. PSMN130-200D-VB is suitable for driving and controlling a variety of modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PSMN130-200D-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 30A
- **Technology**: Trench
- **Model**: PSMN130-200D-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 30A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
PSMN130-200D-VB is suitable for multiple fields and modules, including:
1. **Power management**: In the switch mode power supply (SMPS), as the main switching element, it can effectively improve the conversion efficiency and reduce energy consumption.
2. **Motor drive**: Used in motor control systems, it can switch quickly, achieve precise control, and reduce heat.
3. **Automotive electronics**: In the power distribution and management system of the car, the use of this MOSFET can improve the reliability and efficiency of the system.
4. **LED drive**: In high-power LED applications, as a drive switch, it can provide efficient current control.
5. **Portable devices**: In portable electronic devices, the use of this device can effectively extend battery life and improve device performance.
Through these applications, PSMN130-200D-VB can meet the needs of different industrial fields for high efficiency and reliability.
PSMN130-200D-VB is suitable for multiple fields and modules, including:
1. **Power management**: In the switch mode power supply (SMPS), as the main switching element, it can effectively improve the conversion efficiency and reduce energy consumption.
2. **Motor drive**: Used in motor control systems, it can switch quickly, achieve precise control, and reduce heat.
3. **Automotive electronics**: In the power distribution and management system of the car, the use of this MOSFET can improve the reliability and efficiency of the system.
4. **LED drive**: In high-power LED applications, as a drive switch, it can provide efficient current control.
5. **Portable devices**: In portable electronic devices, the use of this device can effectively extend battery life and improve device performance.
Through these applications, PSMN130-200D-VB can meet the needs of different industrial fields for high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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