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PSMN040-200W-VB Product details
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PSMN040-200W-VB Product Introduction
PSMN040-200W-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 200V, with an excellent on-resistance (RDS(ON)) of 21mΩ (at VGS=10V), supporting a current carrying capacity of up to 96A. This MOSFET uses advanced Trench technology to provide lower power consumption and higher efficiency, suitable for a variety of power conversion and switching applications.
PSMN040-200W-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 200V, with an excellent on-resistance (RDS(ON)) of 21mΩ (at VGS=10V), supporting a current carrying capacity of up to 96A. This MOSFET uses advanced Trench technology to provide lower power consumption and higher efficiency, suitable for a variety of power conversion and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: PSMN040-200W-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 96A
- **Technology type**: Trench
- **Model**: PSMN040-200W-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 96A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
1. **Power management**:
- PSMN040-200W-VB can be used in switch mode power supplies (SMPS) for efficient voltage conversion and power regulation.
2. **Motor drive**:
- Suitable for motor control modules, providing fast switching capabilities, reducing power consumption and enhancing motor performance.
3. **Electric vehicles**:
- In electric vehicles, it can be used as a key component in the battery management system to ensure efficient energy transmission and safety.
4. **UPS system**:
- In an uninterruptible power supply (UPS) system, this MOSFET can switch efficiently to ensure stable power supply to equipment during power outages.
5. **Solar inverter**:
- Suitable for use in solar inverters to help achieve efficient DC to AC conversion and improve overall system efficiency.
Through these applications, PSMN040-200W-VB MOSFET can provide efficient and reliable solutions for modern electronic devices and systems.
1. **Power management**:
- PSMN040-200W-VB can be used in switch mode power supplies (SMPS) for efficient voltage conversion and power regulation.
2. **Motor drive**:
- Suitable for motor control modules, providing fast switching capabilities, reducing power consumption and enhancing motor performance.
3. **Electric vehicles**:
- In electric vehicles, it can be used as a key component in the battery management system to ensure efficient energy transmission and safety.
4. **UPS system**:
- In an uninterruptible power supply (UPS) system, this MOSFET can switch efficiently to ensure stable power supply to equipment during power outages.
5. **Solar inverter**:
- Suitable for use in solar inverters to help achieve efficient DC to AC conversion and improve overall system efficiency.
Through these applications, PSMN040-200W-VB MOSFET can provide efficient and reliable solutions for modern electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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