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PSMN020-100YS-VB Product details
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Product Introduction
**PSMN020-100YS-VB** is a high-efficiency N-channel MOSFET in a SOT669 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET can reach 100V and can withstand a leakage current (ID) of up to 69A. Its superior on-resistance (RDS(ON)) is 13.92mΩ and 11.6mΩ at gate-source voltages of 4.5V and 10V, respectively, making it extremely efficient in power management and switching applications. With its advanced Trench technology, PSMN020-100YS-VB is able to achieve excellent performance in high-frequency applications and is suitable for a variety of high-efficiency circuit designs.
**PSMN020-100YS-VB** is a high-efficiency N-channel MOSFET in a SOT669 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET can reach 100V and can withstand a leakage current (ID) of up to 69A. Its superior on-resistance (RDS(ON)) is 13.92mΩ and 11.6mΩ at gate-source voltages of 4.5V and 10V, respectively, making it extremely efficient in power management and switching applications. With its advanced Trench technology, PSMN020-100YS-VB is able to achieve excellent performance in high-frequency applications and is suitable for a variety of high-efficiency circuit designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 11.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: PSMN020-100YS-VB
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ (VGS = 4.5V)
- 11.6mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 69A
- **Technology**: Trench
- **Model**: PSMN020-100YS-VB
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ (VGS = 4.5V)
- 11.6mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 69A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Portable power management**: PSMN020-100YS-VB is ideal for power management of portable electronic devices, providing efficient energy conversion and reducing power consumption.
2. **Power tools**: In power tools, this MOSFET can effectively drive high-power motors, ensuring stable current output when the load changes, thereby improving the performance and durability of the tool.
3. **Electric vehicles**: This MOSFET is widely used in the power management system of electric vehicles to optimize battery efficiency and enhance the response speed and performance of the power system.
4. **LED drive**: PSMN020-100YS-VB can achieve efficient switching control in LED drive circuits to meet the requirements of fast switching and high efficiency.
5. **High-frequency switching circuit**: This MOSFET is suitable for high-frequency power amplifiers and other high-frequency applications, providing excellent dynamic characteristics and low conduction losses to meet the needs of modern electronic devices.
Through these applications, PSMN020-100YS-VB demonstrates its importance in high-efficiency circuit design, and is able to adapt to a variety of complex working environments and provide excellent performance.
1. **Portable power management**: PSMN020-100YS-VB is ideal for power management of portable electronic devices, providing efficient energy conversion and reducing power consumption.
2. **Power tools**: In power tools, this MOSFET can effectively drive high-power motors, ensuring stable current output when the load changes, thereby improving the performance and durability of the tool.
3. **Electric vehicles**: This MOSFET is widely used in the power management system of electric vehicles to optimize battery efficiency and enhance the response speed and performance of the power system.
4. **LED drive**: PSMN020-100YS-VB can achieve efficient switching control in LED drive circuits to meet the requirements of fast switching and high efficiency.
5. **High-frequency switching circuit**: This MOSFET is suitable for high-frequency power amplifiers and other high-frequency applications, providing excellent dynamic characteristics and low conduction losses to meet the needs of modern electronic devices.
Through these applications, PSMN020-100YS-VB demonstrates its importance in high-efficiency circuit design, and is able to adapt to a variety of complex working environments and provide excellent performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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