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PSMN017-30EL-VB Product details
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PSMN017-30EL-VB Product Introduction
PSMN017-30EL-VB is a high-efficiency N-Channel MOSFET in a TO263 package, designed for low voltage and high current applications. The device has a rated drain-to-source voltage (VDS) of 30V and a gate-to-source voltage (VGS) of ±20V, suitable for a variety of power management and load switching scenarios. The on-resistance (RDS(ON)) of the PSMN017-30EL-VB is 18mΩ at VGS=4.5V, and drops to 12mΩ at VGS=10V, ensuring minimal energy loss under high current conditions. Its threshold voltage (Vth) is 1.7V, ensuring rapid turn-on at lower gate voltages. Using advanced Trench technology, the PSMN017-30EL-VB has excellent switching performance and thermal management capabilities, making it an ideal choice for modern electronic design.
PSMN017-30EL-VB is a high-efficiency N-Channel MOSFET in a TO263 package, designed for low voltage and high current applications. The device has a rated drain-to-source voltage (VDS) of 30V and a gate-to-source voltage (VGS) of ±20V, suitable for a variety of power management and load switching scenarios. The on-resistance (RDS(ON)) of the PSMN017-30EL-VB is 18mΩ at VGS=4.5V, and drops to 12mΩ at VGS=10V, ensuring minimal energy loss under high current conditions. Its threshold voltage (Vth) is 1.7V, ensuring rapid turn-on at lower gate voltages. Using advanced Trench technology, the PSMN017-30EL-VB has excellent switching performance and thermal management capabilities, making it an ideal choice for modern electronic design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN017-30EL-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain to Source Voltage (VDS)**: 30V
- **Gate to Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 50A
- **Technology**: Trench technology
- **Model**: PSMN017-30EL-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain to Source Voltage (VDS)**: 30V
- **Gate to Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 50A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **DC-DC converter**: PSMN017-30EL-VB is ideal for use in switching power supplies and DC-DC converters. Its low on-resistance and high current handling capability enable it to achieve high efficiency and reduce energy loss during power conversion.
2. **Motor control**: In motor drive applications, this MOSFET can be used as a switching element to support large current requirements, ensure smooth start-up and precise control of the motor, and improve the overall performance of the system.
3. **LED lighting control**: In LED drive circuits, PSMN017-30EL-VB can be used to adjust the brightness and switch of LEDs, ensuring efficient thermal management and long-term stable operation.
4. **Battery management system**: This MOSFET is suitable for battery management applications to effectively control the charging and discharging process to ensure the safety and efficient operation of the battery, especially in portable devices and electric vehicles.
PSMN017-30EL-VB has become an indispensable switching component in modern electronic devices with its superior performance and wide application range, and can meet the design requirements of high efficiency and low power consumption.
1. **DC-DC converter**: PSMN017-30EL-VB is ideal for use in switching power supplies and DC-DC converters. Its low on-resistance and high current handling capability enable it to achieve high efficiency and reduce energy loss during power conversion.
2. **Motor control**: In motor drive applications, this MOSFET can be used as a switching element to support large current requirements, ensure smooth start-up and precise control of the motor, and improve the overall performance of the system.
3. **LED lighting control**: In LED drive circuits, PSMN017-30EL-VB can be used to adjust the brightness and switch of LEDs, ensuring efficient thermal management and long-term stable operation.
4. **Battery management system**: This MOSFET is suitable for battery management applications to effectively control the charging and discharging process to ensure the safety and efficient operation of the battery, especially in portable devices and electric vehicles.
PSMN017-30EL-VB has become an indispensable switching component in modern electronic devices with its superior performance and wide application range, and can meet the design requirements of high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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